Abstract Negative differential resistance (NDR) with multi‐level resistive switching has been investigated for realizing memory devices. However, achieving a high peak‐to‐valley ratio of NDR is formidable challenge reliable switch. Here, new type light‐enhanced device accompanied based on glutamine‐functionalized MoS 2 quantum dots demonstrated. By increasing the illuminated light power device,...

We investigate here a possible mechanism for the room temperature negative differential resistance (NDR) in the Au/AN-OPE/RS/Hg self-assembled monolayer (SAM) system, where AN-OPE = 20-amino,50-nitro-oligo(phenylene ethynylene) and RS is a C14 alkyl thiolate. Kiehl and co-workers showed that this molecular system leads toNDRwith hysteresis and sweep-rate-dependent position and amplitude in the ...

A decrease in current with increasing voltage, often referred to as negative differential resistance NDR , has been observed in many electronic devices and can usually be understood within a one-electron picture. However, NDR has recently been reported in nanoscale devices with large single-electron charging energies which require a many-electron picture in Fock space. This paper presents a gen...

The conductance-voltage spectrum of molecular nanostructures measured by scanning tunneling spectroscopy (STS) is generally assumed to reflect the local density of states of the molecule. This excludes the possibility of observing negative differential resistance (NDR). We report here the observation of NDR in the scanning tunneling microscope (STM) current-voltage (I-V) characteristics of self...

-Transmission coefficient, eigen states and tunneling current density of a potentially symmetric quantum double barrier structure has been numerically computed using transfer matrix technique for qualitative analysis of resonant tunneling probability when realistic band structure of higher band gap material is taken into account. GaAs/AlxGa1-xAs material composition is taken as an example for c...

Variations in the switching threshold voltage of memristive devices present significant challenges for their integration into large-scale circuits. In this paper, we propose to address this problem by adding a device exhibiting S-type (N-type) negative differential resistance (NDR) in series (parallel) with memristive devices. The main effect comes from the transition between lowand highconduct...

Conductivity properties of DNA molecule is investigated in a simple, but chemically specific approach that is intimately related to the Su-Schrieffer-Heeger (SSH) model. This model is a tight-binding linear nanoscale chain. We have tried to study the electrical current flowing in DNA and investigated the characteristic I-V diagram. As a result, It is shown that there are the (quasi-) ohmic area...

Recently there is a renewed interest in the development of transistor circuits which emulate the Negative Differential Resistance (NDR) exhibited by different emerging devices like Resonant Tunneling Diodes (RTDs). These MOS-NDR circuits easily allow the prototyping of design concepts and techniques developed for such NDR devices. The importation of those concepts into transistor technologies c...

Al(Ga)N/GaN resonant tunneling diodes (RTDs) are grown by metal-organic chemical vapor deposition. The effects of material quality on room temperature negative differential resistance (NDR) behaviour of RTDs are investigated by growing the RTD structure on AlN, GaN, and lateral epitaxial overgrowth GaN templates. This reveals that NDR characteristics of RTDs are very sensitive to material quali...

Experimental results on the electrical characteristics of Hg-alkanethiol/arenethiol-Au molecular junctions are used to develop a physical model for the hysteretic negative-differential resistance NDR for these, and possibly other, metal-molecule-metal junctions. The dependence of the room-temperature current-voltage characteristic on sweep direction and sweep rate is examined. Based on several ...