In this paper, we will introduce a new algorithm for calculating the Green’s function of Schrödinger equation in a block layered potential, which has various and practical application in the quantum modeling of electron transport in a nano-MOSFET transistor. The proposed method is based on expansion of eigenfunctions of some Sturm-Liouville problems and collocation matching procedure. Numerical...

For fast computation of drain current in Nano-MOSFET, we have developed a new backscattering model based on the accurate determination of ballistic and backscattering probabilities along the channel. The main elements of this model are deduced from careful analysis of transport in devices using Monte Carlo simulation. The backscattering coefficient is in very good agreement with the results of ...

During the traditional channel noise modeling of nanoscale MOSFETs, neither suppression shot by Fermi and Coulomb effects nor cross correlation between source current gate is considered. However, they should not be ignored. In this study, a 22 nm MOSFET tested experimentally, results show that suppressed noise, thermal are main types noises in nano-MOSFETs. Furthermore, according to physical st...

A new panel-level silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET) power module was developed by using the fan-out and embedded chip technologies. To achieve more effective thermal management higher reliability under cycling, a optimization method called Ant colony optimization-back propagation neural network (ACO-BPNN) for optimizing SiC modules, contrast it wit...

The double gate junctionless transistor (DG-JLT) has become the most promising device in sub nano-meter regime. DGJLT based circuits have improved performance and simpler fabrication than their inversion mode counterparts. This paper demonstrates design of different analog digital using DGJLT. Amplifiers inverters are basic building block electronic ICs. A MOS amplifier converts variation to so...

Abstract For understanding of the device operations and its interaction with the circuit in the nano scale era, the device simulation has been extended to include the quantum transport effects, statistical effects and to be compatible with the circuit simulation environments. To do so, the full Newton scheme has been developed to fully integrate the Poisson equation, transport equation and the ...

The low power consumption and good speed has become an important issues in the minds of consumers as electronic items are increasing in every houses, everyday. VLSI has been very successful in this aspect as new and new technologies are been developed in VLSI, which has lead, a solution to the above problem. DG MOSFET, proposed in 1984 as “XMOS” by ETL is the most promising and leading contende...

We numerically study the influence of scattering along the channel and extension regions of dual gate nano-MOSFETs. It is found that the reduction in drain current due to scattering in the right half of the channel is comparable to the reduction in drain current due to scattering in the left half of the channel, when the channel length is comparable to the scattering length. As the channel leng...

An accurate analytical transient response and propagation delay model of nano CMOS inverter is presented. A modified version of α -power law MOSFET current model is proposed. The proposed model overcomes the over-estimation of linear region current in α -power law current model, and takes into account the channel length modulation effects in nano devices. A new methodology to estimate propagati...