نتایج جستجو برای: metalorganic framework
تعداد نتایج: 463273 فیلتر نتایج به سال:
Articles you may be interested in Publisher's Note: " High-voltage field effect transistors with wide-bandgap-Ga2O3 nanomembranes " [Appl. Phys. Isotope disorder of phonons in GaN and its beneficial effect on high power field effect transistors Appl. Gate leakage effects and breakdown voltage in metalorganic vapor phase epitaxy AlGaN/GaN heterostructure field-effect transistors Appl. Two-channe...
We report on the metalorganic vapor phase epitaxial (MOVPE) growth of AlN films on sapphire substrates. The effect of precursor flow rate and nucleation layer (NL) on the film quality was investigated. The films were characterized using AFM, XRD and PL. We could realize AlN films with very smooth surfaces and narrow symmetric XRD peaks indicating low screw/mixed type dislocation densities in th...
MOVPE growth of inP with trimethylindium-trimethylphosphane (CH,)3In-P(CH,)3, a metalorganic adduct and phosphane P(CH3)3 are reported. The growth temperature was varied between 500 and 600 C. The growth rate is about 1 2 ym/h. The results of this epitaxial process are compared with results on the PCl3/ln/H2-system. Finally n+/n/n+-structures are used for the fabrication of Gunn oscillators in ...
Cu2O nanodots have been grown on LaAlO3 (0 0 1) substrates using metalorganic chemical vapor deposition. X-ray diffraction reveals that the nanodots grow epitaxially on the substrate. The dots are hut-shaped islands with {1 1 1} side facets. Evolution of the nanodot shape, density, and size during growth has been analyzed by scanning electron microscopy and atomic force microscopy. It is shown ...
We have examined the structural properties of InP/In0.53Ga0.47As superlattices grown by metalorganic molecular beam epitaxy by varying the periodicity and the total thickness. We observed a roughening transition, which involves the formation of wavy interfaces, when the period and total thickness of the superlattice exceeded critical values. Interface roughening in the wake of the growth front ...
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