MOVPE growth of inP with trimethylindium-trimethylphosphane (CH,)3In-P(CH,)3, a metalorganic adduct and phosphane P(CH3)3 are reported. The growth temperature was varied between 500 and 600 C. The growth rate is about 1 2 ym/h. The results of this epitaxial process are compared with results on the PCl3/ln/H2-system. Finally n+/n/n+-structures are used for the fabrication of Gunn oscillators in ...

Cu2O nanodots have been grown on LaAlO3 (0 0 1) substrates using metalorganic chemical vapor deposition. X-ray diffraction reveals that the nanodots grow epitaxially on the substrate. The dots are hut-shaped islands with {1 1 1} side facets. Evolution of the nanodot shape, density, and size during growth has been analyzed by scanning electron microscopy and atomic force microscopy. It is shown ...

We have examined the structural properties of InP/In0.53Ga0.47As superlattices grown by metalorganic molecular beam epitaxy by varying the periodicity and the total thickness. We observed a roughening transition, which involves the formation of wavy interfaces, when the period and total thickness of the superlattice exceeded critical values. Interface roughening in the wake of the growth front ...

Highly luminescent GaAs 1~x N x alloys were successfully grown by atmospheric pressure metalorganic vapor-phase epitaxy (MOVPE). The nitrogen composition x of as high as 5.6% was obtained using trimethylgallium (TMGa), tertiarybutylarsine (TBAs) and dimethylhydrazine (DMHy) precursors. In-situ and post-growth rapid thermal annealing was performed to enhance the optical quality of the material. ...

Current state-of-the-art epitaxial growth techniques employ various metalorganic and hydride gases to deliver constituent species to the substrate surface, particularly high vapor pressure species such as phosphorus and sulfur. Gas source molecular beam epitaxy (GSMBE) utilizes hydride gas sources and solid elemental sources. The more conventional growth approach, molecular beam epitaxy (MBE), ...

We report on the large area realization of GaN photonic crystal slabs with semipolar InGaN quantum wells (QWs) using laser interference lithography and selective area metalorganic vapour phase epitaxy (MOVPE). Directional extraction of guided modes was observed in angle-resolved photoluminescence spectroscopy (ARPL), and the photonic crystal slab dispersion relation was measured. A comparison o...

Recently, AlN bulk crystals with very high crystal quality have become available in diameters up to 25 mm. Metalorganic vapor phase epitaxy (MOVPE) allows to grow either very pure homoepitaxial AlN layers, or layers with controlled silicon (n-type) doping. We investigated such layers by low-temperature photoluminescence (PL), reflectance, and ellipsometry. We find very narrow lines, which allow...

We propose and evaluate the use of metallocene compounds as reducing agents for the chemical vapour deposition (and specifically atomic layer deposition, ALD) of the transition metal Cu from metalorganic precursors. Ten different transition metal cyclopentadienyl compounds are screened for their utility in the reduction of Cu from five different Cu precursors by evaluating model reaction energi...

substrates by metalorganic chemical vapor deposition Maxwell Zheng, Zhibin Yu, Tae Joon Seok, Yu-Ze Chen, Rehan Kapadia, Kuniharu Takei, Shaul Aloni, Joel W. Ager, Ming Wu, Yu-Lun Chueh, and Ali Javey Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USA Lawrence Berkeley National Laboratory, Material Sciences Division, Berkeley, C...