Double-gate carbon nanotube field effect transistors (DGCNTFETs) are novel devices showing an interesting property allowing to control the por n-type behavior during the device operation. This opens up the opportunity for novel design paradigms. Based on a compact physical model of these devices, we demonstrate the benefit of designing field-programmable gate arrays (FPGAs) using fine-grain DG-...

As silicon semiconductor device feature size scales down to the nanometer range, planar bulk CMOS design and fabrication encounter significant challenges nowadays. Carbon Nanotube Field Effect Transistor (CNTFET) has been introduced for high stability, high performance and low power SRAM cell design as an alternative material. Technology scaling demands a decrease in both VDD and VT to sustain ...

30 b 0 = pl(T new ; b), and q 0 = pl(T new ; v). We now construct ZST T 0 for S by cutting oo the subtree of T rooted at q and replacing it with T new minus the edge between q and z. Since t LD (T 0 ; q) = d(q; s i), it must be that t LD (T 0 ; q) t LD (T; q). If the strict inequality holds, we add extra wire between q and q 0 to enforce equality, and thereby retain zero skew. For convenience, ...

Therapy-related acute myeloid leukemia (t-AML) is a heterogeneous entity most frequently related to breast cancer or lymphoproliferative diseases (LD). Population-based studies have reported an increased risk of t-AML after treatment of lymphomas. The aim of this study was to describe the characteristics and outcome of 80 consecutive cases of t-AML following treatment of LD. t-AML accounted for...

This paper discusses the device physics of carbon nanotube field-effect transistors (CNTFETs). After reviewing the status of device technology, we use results of our numerical simulations to discuss the physics of CNTFETs emphasizing the similarities and differences with traditional FETs. The discussion shows that our understanding of CNTFET device physics has matured to the point where experim...

A mathematical model for the effect of oxide thickness on ambient conduction is provided in Schottky Barrier Carbon Nanotubes (CNTs) Field Effect Transistor (SB-CNTFET). To develop them as future IC (integrated circuit) technology, suppression ambipolar behaviour SB-CNTFET imperative. The nature contributes to a high amount leakage current. tox ≈ 49.91nm uses dielectric gate with inhibit behavi...

The adder circuit is basic component of arithmetic logic design and that the most important block processor architecture. Moreover, power consumption main concern for real-time digital systems. In recent times, carbon nanotube field effect transistors (CNTFET) used designs with high performance. A creative substitute highspeed, less power, small size in area CNTFET. This paper presents 1- bit f...

In this paper, we propose new universal designs of ternary-valued logic (TVL) with high-speed, low-power and full swing output using carbon nanotube FETs (CNTFETs). All of the TVL functions (3 functions) can be implemented in these designs. Ternary value logic is a promising alternative to binary logic due to the reduced integrated circuit (IC) interconnects and chip area. Therefore, a universa...

This study presents new low-power multiple-valued logic (MVL) circuits for nanoelectronics. These carbon nanotube field effect transistor (FET) (CNTFET)-based MVL circuits are designed based on the unique characteristics of the CNTFET device such as the capability of setting the desired threshold voltages by adopting correct diameters for the nanotubes as well as the same carrier mobility for t...

In this paper we analyze threshold voltage and body coefficient (Υ) on varying the oxide thickness in CNTFET. Simulation analysis of drain current and drain voltage characteristic is discussed and found that due to decreasing nature of quantum capacitance in CNTFET, the factor (Υ) has still impact on device and it is not negligible in deep nano regime. We also observed from simulation on nanohu...