Scaling of silicon (Si) transistors is predicted to fail below 5-nanometer (nm) gate lengths because of severe short channel effects. As an alternative to Si, certain layered semiconductors are attractive for their atomically uniform thickness down to a monolayer, lower dielectric constants, larger band gaps, and heavier carrier effective mass. Here, we demonstrate molybdenum disulfide (MoS2) t...

In this paper, for the first time, a two-dimensional (2D) analytical drain current model for sub-100 nm multi-layered gate material engineered trapezoidal recessed channel (MLGMETRC) MOSFET: a novel design is presented and investigated using ATLAS and DEVEDIT device simulators, to mitigate the large gate leakages and increased standby power consumption that arise due to continued scaling of SiO...

The high complexity and the short lifetime of 3D graphics acceleration hardware increase the necessity of an environment for hardware development. For easy modification and fast testing of architecture, a high-level language based environment is desirable. Therefore, in this paper we propose a Graphics Architecture Testing Environment (GATE) that is based on Microsoft Visual C++. GATE models ov...

By transporting one DNA double helix (T-segment) through a double-strand break in another (G-segment), topoisomerase II reduces fractions of DNA catenanes, knots and supercoils to below equilibrium values. How DNA segments are selected to simplify the equilibrium DNA topology is enigmatic, and the biological relevance of this activity is unclear. Here we examined the transit of the T-segment ac...

Abstract We report detailed fabrication and characterization of poly-Si thin-film transistors (TFTs) with T-shaped gate (T-gate) lightly-doped drain (LDD) structures. The formation the LDD underneath wings a T-gate primarily relies on shadowing implanted dopants during implantation source drain. Therefore, structures in our proposed TFTs can save number process steps as compared to conventional...

Liquid/solid interfaces are attracting growing interest not only for applications in catalytic activities and energy storage, but also for their new electronic functions in electric double-layer transistors (EDLTs) exemplified by high-performance organic electronics, field-induced electronic phase transitions, as well as superconductivity in SrTiO(3) (ref. 12). Broadening EDLTs to induce superc...

Understanding magnetoresistance, the change in electrical resistance under an external magnetic field, at the atomic level is of great interest both fundamentally and technologically. Graphene and other two-dimensional layered materials provide an unprecedented opportunity to explore magnetoresistance at its nascent stage of structural formation. Here we report an extremely large local magnetor...

Radio-frequency application of graphene transistors is attracting much recent attention due to the high carrier mobility of graphene. The measured intrinsic cut-off frequency (f(T)) of graphene transistor generally increases with the reduced gate length (L(gate)) till L(gate) = 40 nm, and the maximum measured f(T) has reached 300 GHz. Using ab initio quantum transport simulation, we reveal fo...

Rober tson has advanced the concept tha t all l ipoprotein membranes in and a round cells have the characterist ic triple-layered 'uni t membrane s t ructure" (8 10). O the r authors have reported occasional exceptions. Thus Lillibridge (6) described a single-layered m e m b r a n e in pepsiniferous cells in h u m a n stomach, and Kar re r (4) has ment ioned certain vesicles in lung phagocytes ...