نتایج جستجو برای: keywords drain conditions
تعداد نتایج: 2668847 فیلتر نتایج به سال:
This paper presents an analytical surface potential model for pocket implanted sub-100 nm nMOSFET. The model is derived by solving the Poisson's equation in the depletion region at the surface with the appropriate boundary conditions at source and drain. The model includes the effective doping concentration of the two linear pocket profiles at the source and drain sides of the device. The model...
Current collapse effects in an Al0.25Ga0.75N/GaN HFET have been investigated under pulsed bias conditions, and a detailed investigation of current responses to changes in drain or gate bias voltage (drain-lag and gate-lag, respectively) has been performed. Three components of transient current response to changes in drain and gate bias voltages are distinguished. Surface treatment using KOH etc...
A hierarchical framework is proposed to address the issues of modeling different type of words in keyword spotting (KWS). Keyword models are built at various levels according to the availability of training set resources for each individual word. The proposed approach improves the performance of KWS even when no training speech is available for the keywords. It also suggests an easier way to co...
boolean byte class double else extends final finally float if implements int interface long native new private public return short static super synchronized this throw throws transient try void volatile while ( ) [ ] { } ; , . = Figure 1: Java keywords.
estimation of root-zone salinity using saltmod in the irrigated area of kalaât el andalous (tunisia)
in tunisia, kalâat el andalous irrigated district is one of the most affected areas by salinization. the objective of this study was to predict the root zone salinity (over 10 years) in this area using the saltmod simulation model for subsurface drainage system. saltmod is based on water balance, salt balance model, and seasonal agronomic aspects. in the pilot area, irrigated vegetables crops s...
We report on non resonant detection of sub-terahertz radiation (148-353 GHz) using strained silicon modulation field effect transistor with different gate lengths. The devices were excited at room temperature by a Backward Wave Oscillator (BWO) source. Enhancement of the photoresponse signal by drain-to-source bias was observed. Increasing drain-to-source voltage leads to asymmetry between the ...
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