Conclusions The dopingless (DL) JLFET has recently been proposed as a potential candidate that relaxes the requirements of high work function of gate metal electrode and heavy doping throughout from source, channel and drain regions.  Previous studies revealed that the DL-JLFET shows better immunity towards process variation induced random dopant fluctuations in contrast with conventional JLF...

In this paper, we propose a doping-less dual-material double-gate tunnel field-effect transistor with P+ pocket (PP-DMG TFET). This gate-engineered technique is typically used in MOSFET to improve device performance. The embedded at the source side enhance performance of pocket-engineered PP-DMG TFET device. paper compares four DG-TFET-based devices, i.e. single-material gate (SMG), (PP-SMG), (...

Abstract: In this paper, a novel tunnel field effect transistor (TFET) is introduced, thatdue to its superior gate controllability, can be considered as a promising candidate forthe conventional TFET. The proposed electrically doped heterojunction TFET(EDHJTFET) has a 3D core-shell nanotube structure with external and internal gatessurrounding the channel that employs el...

In this paper, the transient device performance analysis of n-type Gate Inside JunctionLess Transistor (GI-JLT) has been evaluated. 3-D Bohm Quantum Potential (BQP) transport device simulation has been used to evaluate the delay and power dissipation performance. GI-JLT has a number of desirable device parameters such as reduced propagation delay, dynamic power dissipation, power and delay prod...

In this paper, a two-dimensional analytical model of laterally graded-channel triple-metal double-gate Junctionless Field Effect Transistor with hetero dielectric gate oxide stack consisting SiO2 and HfO2 is derived. The illustrates higher drive current better performance against hazardous SCEs HCEs in below 30 nm regime. Parabolic approximation method used here to construct channel potentials ...

This work demonstrates a feasible single poly-Si gate-all-around (GAA) junctionless fin field-effect transistor (JL-FinFET) for use in one-time programming (OTP) nonvolatile memory (NVM) applications. The advantages of this device include the simplicity of its use and the ease with which it can be embedded in Si wafer, glass, and flexible substrates. This device exhibits excellent retention, wi...

This paper examines the performance of a Gate-Engineered Gate-All-Around Charge Plasma Nanowire Field Effect Transistor (GAA-DMG-GS-CP NW-FET) and implementation common source (CS) amplifier circuit. The proposed GAA-DMG-GS-CP NW-FET incorporates dual-material gate (DMG) stack (GS) as engineering techniques its analog/RF parameters are compared to those Single-Material Gate (GAA-SMG-CP device. ...