The mechanical deformation by spherical indentation of both crystalline InP and GaAs was characterized using cross-sectional transmission electron microscopy ~XTEM! and atomic force microscopy. All load–unload curves show a discontinuity ~or ‘‘pop in’’! during loading. Slip bands oriented along $111% planes are visible in XTEM micrographs from residual indentations in both materials and no evid...

Graphene (Gr) is of great interest in the development new electronic, photonic, and composite materials. The physical properties Gr can vary depending on number layers, this unique property makes it a potential material for different electronic applications. In study, few-layer graphene (FLG) film was spin-coated onto InP semiconductor surface FLG/n-InP Schottky contact produced. quality FLG na...

The strain relaxation mechanism and defect properties of compositionally step-graded InAsyP1−y buffers grown by molecular beam epitaxy on InP have been investigated. InAsP layers having lattice misfits ranging from 1% to 1.4% with respect to InP, as well as subsequently grown lattice matched In0.69Ga0.31As overlayers on the metamorphic buffers were explored on both 100 and 2° offcut 100 InP sub...

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The conditions under which the band gaps of free standing and embedded semiconductor quantum dots are direct or indirect are discussed. Semiconductor quantum dots are classified into three categories; (i) free standing dots, (ii) dots embedded in a direct gap matrix, and (iii) dots embedded in an indirect gap matrix. For each category, qualitative predictions are first discussed, followed by th...

We experimentally investigate the optical properties of layers of InP, Si, and GaP nanowires, relevant for applications in solar cells. The nanowires are strongly photonic, resulting in a significant coupling mismatch with incident light due to multiple scattering. We identify a design principle for the effective suppression of reflective losses, based on the ratio of the nondiffusive absorptio...

Detailed analysis of the 1/f low-frequency noise (LFN) in In0:52Al0:48As/InGaAs MODFET structures is performed, for low drain bias (below pinch-off voltage), in order to identify the physical origin and the location of the noise sources responsible for drain current fluctuations in the frequency range 0.1 Hz–105 Hz. Experimental data were analyzed with the support of a general modeling of the 1...

Using transient Rayleigh scattering (TRS) measurements, we obtain photoexcited carrier thermalization dynamics for both zincblende (ZB) and wurtzite (WZ) InP single nanowires (NW) with picosecond resolution. A phenomenological fitting model based on direct band-to-band transition theory is developed to extract the electron-hole-plasma density and temperature as a function of time from TRS measu...

Nanoscale self-assembly offers a pathway to realize heterogeneous integration of III-V materials on silicon. However, for III-V nanowires directly grown on silicon, dislocation-free single-crystal quality could only be attained below certain critical dimensions. We recently reported a new approach that overcomes this size constraint, demonstrating the growth of single-crystal InGaAs/GaAs and In...

1 MeV Fe' was implanted into n-type InP and InGaAs layers at different substrate temperatures, -196'C, room temperature (RT), 100°C and 2OO0C to obtain highresistivity regions. The sheet resistivity of the InP and InGaAs epilayers grown on semiinsulating (SI) InP substrates was measured as a function of substrate temperature and post-implantation annealing temperature (100 SOO'C). For InP, a ma...