Group IIIA phosphide nanocrystalline semiconductors are of great interest among the important inorganic materials because of their large direct band gaps and fundamental physical properties. Their physical properties are exploited for various potential applications in high-speed digital circuits, microwave and optoelectronic devices. Compared to II-VI and I-VII semiconductors, the IIIA phosphid...

III-V compound multijunction solar cells enable ultrahigh efficiency performance in designs where subcells with high material quality and high internal quantum efficiency can be employed. However the optimal multijunction cell bandgap sequence cannot be achieved using lattice-matched compound semiconductor materials. Most current compound semiconductor solar cell design approaches are focused o...

This paper gives a status report on the conventional approaches to linear colliders at DESY, KEK, SLAC and INP-Protvino in the Sand X-Band regime. Critical topics are reviewed and a discussion of global issues such as future R&D requirements is included.

Fig. 1. Cross-section of self-aligned base-emitter junction from Teledyne 500nm HBT process [6] InP-based transistor technologies, both high electron mobility transistors (HEMTs) and double heterojunction bipolar transistors (DHBTs), have demonstrated the highest reported transistor RF figures-of-merit. Both device technologies have been reported with current gain cutoff frequencies (ft) in exc...

This work reports experimental data comparing the low frequency noise spectrum of InP based HBTs. Double heterojunction device structures are examined with and without surface passivation ledges. INTRODUCTION Compound semiconductor InP heterojunction bipolar transistors (HBTs) hold great promise for ultra high-speed analog microwave circuit applications. The low frequency noise characteristics ...

lasers, [ 9–11 ] biomedical imaging, [ 12,13 ] and sensors. [ 14,15 ] Currently, CdSe NCs as the workhorse have been well developed for such uses. [ 16–32 ] Despite their apparent advantages (high emission quantum yields, narrow emission line width, good photostability, etc. [ 33–37 ] ), the intrinsic toxicity of CdSe NCs makes them environmentally restricted, which has thus cast a doubtful fut...

INVESTIGATION OF LOW COST SUBSTRATES APPROACHES FOR III-V SOLAR CELLS Marlene Lydia Lichty Old Dominion University, 2017 Director: Dr. Christopher G. Bailey With the need for cleaner energy sources, which can displace fossil fuel, the solar cell industry is of particular interest due to the abundancy of the Sun. Silicon currently dominates terrestrial applications, but efficiency improvements h...

Impressive microwave results have been published for both Single(SHBT) and Double(DHBT) Heterostructure Bipolar Transistors based upon the InP material system. InP-based SHBTs have been reported to have excellent high-frequency performances such as unity current-gain frequency (fT) of 200 GHz (1) and maximum oscillation frequency (fmax) of 236 GHz (2). The best results for InP-based DHBTs inclu...

The direct growth of III-V nanostructures on silicon has shown great promise in the integration of optoelectronics with silicon-based technologies. Our previous work showed that scaling up nanostructures to microsize while maintaining high quality heterogeneous integration opens a pathway toward a complete photonic integrated circuit and high-efficiency cost-effective solar cells. In this paper...