The capacitance of a double-heterojunction structure with a wide GaAs undoped layer embedded between two selectively doped AlGaAs barriers is calculated self-consistently as a function of intensity of the in-plane magnetic field. With increasing field intensity the capacitance initially increases and after reaching a maximum decreases toward a high field limit which is less than its zero field ...

Introduction:GaAsySb1-y/In0xGa1-xAs based III-V staggered hetero-junction Tunnel Field Effect Transistors were demonstrated with MOSFET-like high drive currents at low Vds [1], demonstrating feasibility of TFETs to scale supply voltage for future low power logic applications. More than 2x enhancement in Ion was demonstrated over the In0.7Ga0.3As homo-junction counterpart due to reduction in the...

We investigated cyanine heterojunction photovoltaic devices using carbocyanine dyes as donors and buckminsterfullerene (C60) as acceptor. In particular, we focused on the influence of cyanine counterions on the photovoltaic device characteristics. It was found that counterions can be displaced in the applied electric field and give rise to important hystereses in the current-voltage characteris...

The source resistance of a heterojunction field-effect transistor ~HFET!, whose reduction is mandatory for high-performance devices, consists of an ohmic contact resistance and an access resistance. The access region is located between the geometrical source and the geometrical source side of the gate contact. By means of a quantum-mechanical modeling program, the effect of changes in layer str...

Tunneling field-effect transistors (TFETs) are very applicable to low standby-power application by their virtues of low off-current (Ioff) and small subthreshold swing (S). However, low on-current (Ion) of silicon-based TFETs has been pointed out as a drawback. To improve Ion of TFET, a gate-all-around (GAA) TFET based on III-V compound semiconductor with InAs/InGaAs/InP multiple-heterojunction...

In search of an improved strategy to form low-resistance contacts to semiconducting transition metal dichalcogenides, we combine ab initio density functional electronic structure calculations for an NbSe2/WSe2 interface with quantum transport measurements of the corresponding heterojunction between a few-layer WSe2 semiconductor and a metallic NbSe2 layer. Our theoretical results suggest that, ...

In order to provide an accurate theoretical description of current density voltage (J −V ) characteristics of an organic heterojunction device over a wide range of electric fields at various temperatures, it is proposed that an accumulation of charge carriers at the heterojunction will lead to a reduction in the barrier height across the heterojunction. Two well-known hole transporting material...

The ultimate efficiency of organic solar cells (OSC) is under active debate. The solar cell efficiency is calculated from the current-voltage characteristic as a product of the open-circuit voltage (VOC), short-circuit current (JSC), and the fill factor (FF). While the factors limiting VOC and JSC for OSC were extensively studied, the ultimate FF for OSC is scarcely explored. Using numerical dr...

A biomolecule-assisted pyrolysis method has been developed to synthesize sulfur-doped graphitic carbon nitride (CNS) nanosheets. During the synthesis, sulfur could be introduced as a dopant into the lattice of carbon nitride (CN). Sulfur doping changed the texture as well as relative band positions of CN. By growing CN on preformed sulfur-doped CN nanosheets, composite CN/CNS heterojunction nan...