Polycrystalline SrBi2Nb2O9-layered ferroelectric thin films were synthesized on PtyTiySiO2ySi substrate using the polymeric precursors solution. The dip-coated films were specular and crack-free and crystallized during firing at 700 ±C. Single-, double-, and triple-layered films were obtained by several dips in the deposition solution, and the influence of crystallization between each dip was s...

Here we report the growth of novel transition metal-organic thin-film materials consisting of manganese or cobalt as the metal component and terephthalate as the rigid organic backbone. The hybrid thin films are deposited by the currently strongly emerging atomic/molecular layer deposition (ALD/MLD) technique using the combination of a metal β-diketonate, i.e. Mn(thd)3, Co(acac)3 or Co(thd)2, a...

In the present work we have investigated the relationships existing between the optical properties and the growth mechanism, microstructure and surface roughness of SnO2 and ZnO oxide films prepared by magnetron sputtering under conditions resembling those utilized in industry. Thin films of these oxides with different thicknesses were characterized by atomic force microscopy, glancing incidenc...

Organic bistable devices with an Al/Alq3/n-type Si structure are investigated at different deposition rates of Alq3 thin film. We can obtain current–voltage characteristics of these devices similar to those of metal/organic semiconductor/metal structures that are widely used for organic bistable devices. The bistable effect of the Al/Alq3/n-type Si structure is primarily caused by the interface...

We have studied the laser thermal annealing LTA effects on single crystal GaP. The samples have been analyzed by means of Raman spectroscopy, glancing incidence x-ray diffraction GIRXD , and transmission electron microscopy TEM measurements. After LTA process, the Raman spectra of samples annealed with the highest energy density show a forbidden TO vibrational mode of GaP. This result suggests ...

Single-layered zirconium oxynitride (ZrNxOy) thin films have been deposited on steel substrates, at a constant temperature of 300 8C, by radiofrequency (rf) reactive magnetron sputtering of a pure Zr target in an argon–oxygen–nitrogen atmosphere. The variation of the flow rate of the reactive gases enabled changes in the composition and structure of the films. X-ray diffraction (XRD) and glanci...

We present results derived from continuous and localized 35 keV (55)Mn(+) ion implantations into ZnO. Localized implantations were carried out by using self-ordered alumina membranes as masks leading to ordered arrays of implanted volumes on the substrate surfaces. Defects and vacancies in the small implantation volumes of ZnO were generated due to the implantation processes besides the creatio...