نتایج جستجو برای: ge doped

تعداد نتایج: 67510  

2017
M. Descoins J. Perrin Toinin S. Zhiou K. Hoummada M. Bertoglio R. Ma L. Chow D. Narducci A. Portavoce

Article history: Received 22 December 2016 Received in revised form 12 June 2017 Accepted 15 June 2017 Available online xxxx PdGe contact fabrication on Se-doped Ge(001) is investigated. PdGe thin film resistivity is two times lower if the PdGe layer is grown by Pd reactive diffusion on Se-doped Ge, compared to PdGe layer grown in the same condition on Se-freeGe. The phase sequence and thephase...

2018
Jose M. Porras-Vazquez Jose F. Marco Frank J. Berry Peter R. Slater

In this paper we report the successful incorporation of germanium into Sr1 yCayFeO3 d perovskite materials for potential applications as electrode materials for solid oxide fuel cells. It was observed that Ge doping leads to a change from a tetragonal cell (with partial ordering of oxygen vacancies) to a cubic one (with the oxygen vacancies disordered). Annealing experiments in 5%H2/95%N2 (up t...

Journal: :Optics express 2012
Weiwen Zou Zuyuan He Kazuo Hotate

Brillouin scattering property in a highly nonlinear photonic crystal fiber (HNL-PCF) with hybrid-core structure is experimentally investigated. The HNL-PCF comprises a highly Ge-doped core surrounded by a triangularly-arranged F-doped buffer. It is experimentally shown that there exist five Brillouin resonance peaks with ~300 MHz frequency spacing in the Brillouin gain spectrum, which can be cl...

2012
Seishi Abe

This paper investigates the crystal structure and optical absorption of Ge-doped Nb-oxide (Nb-Ge-O) thin films prepared by RF sputtering. A wide-gap material, Nb2O5, is selectively produced as a matrix to disperse Ge nanocrystals through compositional optimization with Ge chip numbers and oxygen ratio in argon. The optical-absorption spectra are obviously shifted to visible (vis) and near-infra...

Journal: :Chemical communications 2015
Enrico Della Gaspera Noel W Duffy Joel van Embden Lynne Waddington Laure Bourgeois Jacek J Jasieniak Anthony S R Chesman

We present the first colloidal synthesis of Ge-doped ZnO nanocrystals, which are produced by a scalable method that uses only air and moisture stable precursors. The incorporation of tetravalent Ge ions within ZnO nanocrystals generates a surface plasmon resonance in the near-mid infrared, and induces a change in morphology, from isotropic spheroidal nanocrystals to rod-like, elongated structur...

Journal: :Applied radiation and isotopes : including data, instrumentation and methods for use in agriculture, industry and medicine 2015
Mahfuza Begum A K M Mizanur Rahman H A Abdul-Rashid Z Yusoff Mahbuba Begum K A Mat-Sharif Y M Amin D A Bradley

Important thermoluminescence (TL) properties of five (5) different core sizes Ge-doped optical fibers have been studied to develop new TL material with better response. These are drawn from same preform applying different speed and tension during drawing phase to produce Ge-doped optical fibers with five (5) different core sizes. The results of the investigations are also compared with most com...

Journal: :Journal of the Optical Society of America. B, Optical physics 2008
Haohua Tu Yee Lin Koh Daniel L Marks Stephen A Boppart

Transmission of intense femtosecond 825 nm pulses progressively produces a waveguide at the entrance of a heavily Ge-doped silicate fiber. The waveguide behaves as a multimillimeter long-fiber bandpass filter that scatters away light with wavelengths shorter or longer than 850 nm. This phenomenon has been correlated with the ~800 nm photosensitivity producing type I-IR fiber Bragg gratings in s...

2016
A. Entezam M. U. Khandaker Y. M. Amin N. M. Ung D. A. Bradley J. Maah M. J. Safari F. Moradi

Study has been made of the thermoluminescence (TL) response of silica-based Ge-doped cylindrical, flat and photonic crystal fibres (referred to herein as PCF-collapsed) to electron (6, 12 and 20 MeV) and photon (6, 10 MV) irradiation and 1.25 MeV γ-rays, for doses from 0.1 Gy to 100 Gy. The electron and photon irradiations were delivered through use of a Varian Model 2100C linear accelerator lo...

2016
H. Bracht

The enhanced diffusion of donor atoms, via a vacancy (V)-mechanism, severely affects the realization of ultrahigh doped regions in miniaturized germanium (Ge) based devices. In this work, we report a study about the effect of fluorine (F) on the diffusion of arsenic (As) in Ge and give insights on the physical mechanisms involved. With these aims we employed experiments in Ge co-implanted with ...

2004
M. V. Dolguikh A. V. Muravjov R. E. Peale

Monte Carlo simulation of carrier dynamics and far-infrared absorption was performed to test the importance of electron-electron interaction in selectively doped multi-layer p-Ge laser at high doping concentration. The laser design exploits the known widely tunable mechanism of THz amplification on inter-sub-band transitions in p-Ge, but with spatial separation of carrier accumulation and relax...

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