The lateral band-to-band tunneling (L-BTBT) leakage mechanism increases the OFF state current and prevents junctionless transistor from scaling. effect of L-BTBT on FIN shaped gate Junctionless field transistor(JLFET) with ground plane (GP) in oxide has been investigated. proposed device is simulated using 3-D Silvaco TCAD shows that it can mitigate leads to efficient volume depletion which rel...

The influence of metal-oxide interactions on the workfunction and band alignment in thin oxide films is investigated for silica mono- and bilayers grown on Mo(112) and Ru(0001) supports. By analyzing the position of field-emission resonances and the Kelvin-probe signal deduced from conductance and force spectroscopy, we have identified a substantial lowering of the workfunction in the monolayer...

In the first-ever demonstration of FinFET technology suitable for 10-nm CMOS manufacturing – pushing device scaling two nodes beyond the current leading-edge volume production technology – Samsung and others will jointly showcase a platform technology for low-power and high-performance applications. It offers the tightest contacted poly pitch (64 nm) and metallization pitch (48 nm) ever reporte...

Direct quantitative 2-D characterization of sub-50 nm MOSFETs continues to be elusive. This research develops a comprehensive indirect inverse modeling technique for extracting 2-D device topology using combined log(I)-V and C-V data. An optimization loop minimizes the error between a broad range of simulated and measured electrical characteristics by adjusting parame-terized profiles. The extr...

The standard polaron band model of doped organic semiconductors predicts that density-of-states shift into the π-π* gap to give a partially filled polaron band that pins the Fermi level. This picture neglects both Madelung and Hubbard interactions. Here we show using ultrahigh workfunction hole-doped model triarylamine-fluorene copolymers that Hubbard interaction strongly splits the singly-occu...

The semiconducting single-walled carbon nanotube (C-SWNT) has been synthesized by S-doping, and they have extensive potential application in electronic devices. We investigated the electronic structures of S-doped capped (5, 5) C-SWNT with different doping position using first principles calculations. It is found that the electronic structures influence strongly on the workfunction without and ...

In this study, vertical tunnel FET-based ternary CMOS (T-CMOS) is introduced and its electrical characteristics are investigated using TCAD device mixed-mode simulations with experimentally calibrated tunneling parameters. This new T-CMOS utilizes two different types of currents to form three output voltage states: (1) source-to-drain current; (2) conventional source-to-channel current. To a ha...

Abstract The detection of biomolecules has been accomplished in this article by using the tunnel field effect transistor’s (TFET) bipolar nature. fabrication procedure made simpler, prices have gone down, and random dopant fluctuation (RDFs) eliminated charge plasma concept. objective work is to investigate performance a DopingLess- Dual Metal Gate- Cavity- HeteroJunction- Tunnel Field Effect T...