We have investigated RF degradation in GaN high electron mobility transistors (HEMTs) with different gate placement in the source-drain gap. We found that devices with a centered gate show different degradation behavior from those with the gate placed closer to the source. In particular, centered gate devices degraded through a mechanism that has a similar signature as that responsible for high...

In voltage-gated potassium (Kv) channels membrane depolarization causes movement of a voltage sensor domain. This conformational change of the protein is transmitted to the pore domain and eventually leads to pore opening. However, the voltage sensor domain may interact with two distinct gates in the pore domain: the activation gate (A-gate), involving the cytoplasmic S6 bundle crossing, and th...

The gate conductor material affects the threshold voltage of metal-oxidesemiconductor (MOS) transistors through the influence of the electrochemical work function and electric charge. Measurements of the threshold voltage from current voltage characteristics may therefore provide a method to estimate the electronic properties of biomolecules located on the gate electrode. We have deposited DNA ...

1) Introduction Inside a MOSFET transistor, the basis of recent systems, the voltage at the gate contact controls the conductivity and thus the current from source to drain. Ideally, the channel current to gate voltage dependence is a heavy edge function (rf. Fig. 1). If the gate voltage is below the threshold voltage, the current through the channel is 0 and if it is above the threshold voltag...

Voltage-gated ion channels couple conformational change(s) of the voltage-sensing domain to those of the opening of an intracellular gate to allow ionic conduction. Much larger positive potentials are required to couple these conformational changes to the opening of the gate of Shaker K(+) channels with the concurrent mutations V369I, I372L, and S376T (ILT) at the N-terminal end of the S4 segme...

Voltage-dependent ion channels transduce changes in the membrane electric field into protein rearrangements that gate their transmembrane ion permeation pathways. While certain molecular elements of the voltage sensor and gates have been identified, little is known about either the nature of their conformational rearrangements or about how the voltage sensor is coupled to the gates. We used vol...

Conventionally polysilicon is used in MOSFETs for gate material. Doping of polysilicon and thus changing the workfunction is carried out to change the threshold voltage. Additionally polysilicon is not favourable as gate material for smaller dimensional devices because of its high thermal budget process and degradation due to the depletion of the doped polysilicon, thus metal gate is preferred ...

An analytical model for 1/f gate noise is developed and applied to the simulation and the characterization of ultra-thin MOSFETs. The proposed model is based on oxide trapping mechanisms and uses the concept of equivalent flat band voltage fluctuations. The developed model reproduces experimental behaviors. The power spectral density of flat band voltage fluctuation extracted from gate current ...

Graphene field effect transistors with an Al2O3 gate dielectric are fabricated on H-intercalated bilayer graphene grown on semi-insulating 4H-SiC by chemical vapour deposition. DC measurements of the gate voltage vg versus the drain current id reveal a severe hysteresis of clockwise orientation. A capacitive model is used to derive the relationship between the applied gate voltage and the Fermi...

In this paper, we propose new physically based threshold voltage models for short channel Surrounding Gate Silicon Nanowire Transistor with two different geometries. The model explores the impact of various device parameters like silicon film thickness, film height, film width, gate oxide thickness, and drain bias on the threshold voltage behavior of a cylindrical surrounding gate and rectangul...