Detailed chemical kinetic modeling based on computational quantum chemistry has been quite successful in making quantitative predictions about some systems, particularly the combustion of small hydrocarbons and certain areas of atmospheric chemistry. The gas phase chemistry of many processes in high-temperature inorganic systems, from materials synthesis to propulsion to waste incineration, cou...

The chemical vapor deposition (CVD) method to obtain tailored graphene as a transparent and flexible gas barrier has been developed. By separating nucleation step from growth, we could reduce early graphene nucleation density and thus induce better stitching between domain boundaries in the second growth step. Furthermore, two step growth in conjunction with electrochemical polishing of Cu foil...

Graphene, the crystalline allotrope of Carbon has phenomenal electrical properties and hence a number of application prospects. Multi-Layered Graphene (MLG) has tremendous application prospects as gas sensors. Thermal CVD performed at atmospheric pressure is a very simple and affordable synthesis technique for growing MLG. In this project we characterized Thermal-CVD grown MLG films with the At...

Using a conventional thermal chemical vapor deposition (CVD) system, ethanol vapor was enclosed in a reactor, i.e., no flow, with Co/Mo dip-coated quartz substrates to synthesize submillimeter long vertically aligned single-walled carbon nanotube (SWNT) films successfully. The no-flow CVD method yielded an increase in film thickness of up to 0.11 mm compared with the normal flowing gas method f...

gas sensitive metal oxide layers used in fabrication of resistive gas sensors are prepared by different deposition techniques. the technical data reported on some basic and practically important specifications of these devices, although fabricated based on the same gas sensitive oxide, are anomalously different. the influence of the fabrication technique used for the deposition of the gas sensi...

For the emerging semiconductor material silicon carbide (SiC) used in high power devices, chemical vapor deposition (CVD) is the most prominent method to create the electrically active SiC epitaxial layers in the device. The process of growing such epitaxial layers is to use a hydrocarbon and silane diluted in hydrogen flow through a hot chamber where chemical reactions take place in such a man...

This article discusses the growth of silicon and related materials using ultra-high vacuum chemical vapor deposition (UHV/CVD). This growth technique is well suited for deposition of strained epitaxial layers and also layers with metastable concentrations of impurities such as boron and carbon. In UHV/CVD, growth kinetics and the incorporation of various atoms other than silicon are determined ...

Chemical Vapor Deposition (CVD) is one of the most important methods for producing Carbon Nanotubes (CNTs). In this research, a numerical model, based on finite volume method, is investigated. The applied method solves the conservation of mass, momentum, energy and species transport equations with aid of ideal gas law. Using this model, the growth rate and thickness uniformity of produced CNTs,...

Chemical Vapor Deposition (CVD) is one of the most important methods for producing Carbon Nanotubes (CNTs). In this research, a numerical model, based on finite volume method, is investigated. The applied method solves the conservation of mass, momentum, energy and species transport equations with aid of ideal gas law. Using this model, the growth rate and thickness uniformity of produced CNTs,...