influence of aluminum, gallium, indium- doping on the boron-nitride nanotubes (bnnts) investigated with density functional theory (dft) and hartreefock (hf) methods. for this purpose, the chemical shift of difference atomic nucleus was studied using the gauge included atomic orbital (giao) approch. in the following, structural parameter values, electrostatic potential, thermodynamic parameters,...

In this article, we estimate hydrostatic stress developed in gallium ion implanted gallium nitride epitaxial layers using Raman measurements. We have calculated deformation potential constants for E2(high) mode in these epi-layers. The presence of a polar phonon-plasmon coupling in these systems has also been demonstrated. In as-implanted samples, with an increase in implantation fluence, we ha...

In this work, we demonstrated a low current collapse normally on Al2O3/AlGaN/GaN MIS-HEMT with in situ H-radical surface treatment AlGaN. The atomic pretreatment was performed specially designed chamber prior to the thermal ALD-Al2O3 deposition, which improved Al2O3/AlGaN interface Dit of ~2 × 1012 cm−2 eV−1, and thus effectively reduced dynamic Ron degradation. devices showed good electrical p...

In this work, investigations on gallium indium nitride (GaInN) quantum well structures as optochemical transducers in biosensing are presented. In contrast to the conventional electrical read-out of III-nitride-based sensors, a purely optical photoluminescence read-out is performed. Particularly, optical investigations of the iron-storage molecule ferritin deposited on GaInN quantum wells are p...

Numerous technical advances in the area of polymer light emitting diodes (PLEDs) have been made since their discovery in 1990 by Friend et al at Cambridge University . PLEDs are derivatives from the more commonly known LED (light emitting diode) devices. LEDs are solid-state semiconductor devices that convert electrical energy into light. They are typically used as indicator lights and numeric ...

Gallium nitride crystals with definite faces have been fabricated by d.c. arc discharge using gallium and Hz + NH, as starting materials. Transmission electron microscope, selected area diffraction and X-ray diffraction investigation of the as-grown GaN Srystals show thtt the well faceted crystals are single crystalline GaN having a wnrtzite structure with lattice constants a, = 3.18 A and cu =...

Thermochemical and phase diagram data for the Ga–N system were assessed by employing the CALPHADmethod. A consistent model representation of available thermodynamic properties agrees well with the critically evaluated experimental data. Thermodynamic extrapolation/interpolation of these data was applied to estimate the sublimation andmelting characteristics of theGaN compound: at atmospheric pr...

In an effort to combine group III-V semiconductors with carbon nanotubes, a simple solution-based technique for gallium functionalization of nitrogen-doped multi-wall carbon nanotubes has been developed. With an aqueous solution of a gallium salt (GaI(3)), it was possible to form covalent bonds between the Ga(3+) ion and the nitrogen atoms of the doped carbon nanotubes to form a gallium nitride...

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