Chemical costs can be a significant part of semiconductor manufacturing materials cost. True chemical cost consists of raw chemical price, handling expenses and disposal of used chemicals. Some of this usage can be cut back by recycling the chemicals for re-use. This paper describes the work done to establish the use of recycled chemical for etch processing during Gallium Arsenide Hetero-juncti...

Tunnel diodes utilizing deep-levels in low-temperature-grown (LTG) gallium-arsenide (GaAs) are demonstrated. These tunnel diodes achieve peak-to-valley current ratios as high as 22, a record negative-conductance-per-area of 1/226 Xlm, and a record peak current density of 16 kA/cm, all at room-temperature. 2004 Elsevier Ltd. All rights reserved. PACS: 72.20.H; 73.50.F; 85.30.M; 71.55.E; 73.61.E;...

Highly ordered gallium indium phosphide layers with the low bandgap have been successfully grown on the (100) GaAs substrates, the misorientation toward [01-1] direction, using the low-pressure metal organic chemical vapor deposition method. It is found that the optical properties of the layers are same as those of the disordered ones, essentially different from the ordered ones having two orie...

By using electron beam lithography, chemically assisted ion beam etching, and electroplating, we have fabricated high aspect ratio magnetic columns, 60–170 nm in diameter, embedded in an aluminum–gallium–oxide/gallium–arsenide @~Al0.9Ga0.1!2O3 /GaAs# substrate. In our previous work, we demonstrated storage of data in individual columns spaced 2 mm apart. Here the electroplated Ni columns are in...

This article presents the response of RF microelectromechanical systems (RF MEMS), barium strontium titanate (BST), and gallium arsenide (GaAs)-based tunable filters and reconfigurable matching networks to a wideband code-division-multiple-access signal centered at 1.95 GHz. The RF MEMS tunable filter and impedance tuner result in very low intermodulation distortion and spectral regrowth compar...

We report on, to the best of our knowledge, the first singly resonant (SR), synchronously pumped optical parametric oscillator (OPO) based on orientation-patterned gallium arsenide (OP-GaAs). Together with a doubly resonant (DR) degenerate OPO based on the same OP-GaAs material, the output spectra cover 3 to 6 μm within ∼3  dB of relative power. The DR-OPO has the highest output power reported ...

The nonlocal electrons heating in transistor heterostructures based on gallium nitride and arsenide is compared. It shown that if, comparison with a pure bulk material, the case of GaAs double doped pseudomorphic heterostructures, real space transfer significantly reduces their drift velocity overshot region strong field, then for GaN-based decrease studied cases does not exceed 30%.

Enormous progress has been made in recent years on a number of photovoltaic (PV) materials and devices in terms of conversion efficiencies. Ultrahigh-efficiency (>30%) PV cells have been fabricated from gallium arsenide (GaAs) and its ternary alloys such as gallium indium phosphide (GaInP2). The high-efficiency GaAsbased solar cells are being produced on a commercial scale, particularly for spa...

In this study, the influence of the geometric parameters on the optical absorption of gallium arsenide [GaAs] nanowire arrays [NWAs] has been systematically analyzed using finite-difference time-domain simulations. The calculations reveal that the optical absorption is sensitive to the geometric parameters such as diameter [D], length [L], and filling ratio [D/P], and more efficient light absor...

Gallium arsenide (GaAs) is used in the most demanding semiconductor applications, including medical, aerospace and communication industries, where significant mechanical stresses are experienced during operation. Mechanical from thermal expansion loading can result fracture of GaAs crystals, a leading cause device failure. Unfortunately, underlying mechanisms III-V semiconductors currently not ...