Low temperature growth of GaAs (LT-GaAs) near 200 °C results in a recombination lifetime of nearly 1 ps, compared with approximately 1 ns for regular temperature ~600 °C grown GaAs (RT-GaAs), making it suitable for ultra high speed detection applications. However, LT-GaAs detectors usually suffer from low responsivity due to low carrier mobility. Here we report electro-optic sampling time respo...

The addition of 1% In to LEC GaAs has been reported to reduce the dislocation density in this material; similar data exists for Sb doping. Several effects have been inferred to explain these phenomena, the most prevailing one stating that the solid stoichiometry is affected by an as yet unknown mechanism. Similar postulations have been made to explain the growth of semi-insulating GaAs. A therm...

Molybdenum disulfide (MoS2) nanoscaled films are deposited on GaAs substrates via magnetron sputtering technique, and MoS2/GaAs heterojunctions are fabricated. The lateral photovoltaic effect (LPE) of the fabricated MoS2/GaAs heterojunctions is investigated. The results show that a large LPE can be obtained in the MoS2/n-GaAs heterojunction. The LPE exhibits a linear dependence on the position ...

A scanning electrochemical microscope (SECM) was used as an analytical tool to study the etching of GaAs surfaces. Hole injection from several eledrogenerated oxidants to n-type, p-type, and undoped GaAs was examined by the feedback mode of the SECM. Assignment of the process as a hole injection from the oxidized form of the redox couple into the valence band and assignment of the energy of the...

Epitaxial low temperature grown GaAs (LT-GaAs) on silicon (LT-GaAs/Si) has the potential for terahertz (THz) photoconductive antenna applications. However, crystalline, optical and electrical properties of heteroepitaxial LT-GaAs/Si can be very different from those semi-insulating substrates (reference). In this study, we investigate an epitaxial sample, compared to a reference under same subst...

The band structure of strained Si ~4–10 ML! on ~001! GaAs, band lineups of the strained Si/~001!GaAs heterojunction, and confined energy levels of the Si3N4 /Si/GaAs quantum well have been calculated via a pseudopotential method. It has been found that in this technically important Si3N4 /Si/~001!GaAs structure, strained Si has a very narrow band gap ~0.34 eV! at the D' point in the Brillouin z...

A systematic capacitance-voltage study has been performed on GaAs metal-oxide-semiconductor MOS structures with atomic-layer-deposited HfO2/Al2O3 nanolaminates as gate dielectrics. A HfO2/Al2O3 nanolaminate gate dielectric improves the GaAs MOS characteristics such as dielectric constant, breakdown voltage, and frequency dispersion. A possible origin for the widely observed larger frequency dis...