نتایج جستجو برای: field effect transistor fet

تعداد نتایج: 2342382  

2015
Kumjae Shin Junsik Jeon James Edward West Wonkyu Moon

Capacitive-type transduction is now widely used in MEMS microphones. However, its sensitivity decreases with reducing size, due to decreasing air gap capacitance. In the present study, we proposed and developed the Electret Gate of Field Effect Transistor (ElGoFET) transduction based on an electret and FET (field-effect-transistor) as a novel mechanism of MEMS microphone transduction. The ElGoF...

Journal: :The Analyst 2007
Tawab Dastagir Erica S Forzani Ruth Zhang Islamshah Amlani Larry A Nagahara Raymond Tsui Nongjian Tao

We report the unambiguous detection of a sequence of Hepatitis C Virus (HCV) at concentrations down to the fractional pM range using Single Wall Carbon Nanotube (SWNT) Field Effect Transistor (FET) devices functionalized with Peptide Nucleic Acid (PNA).

Journal: :Chemical communications 2009
Akira Matsumoto Takashi Endo Ryo Yoshida Yuji Miyahara

A field effect transistor (FET) whose gate surface has been modified with a stimuli-responsive "smart" polymer gel can visualize the kinetics of the chemo-mechanical signal transduction as a mode of its altered electrical characteristics without any labels.

2016
Jimin Kwon Sujeong Kyung Sejung Yoon Jae‐Joon Kim Sungjune Jung

The fabrication and measurements of solution-processed vertically stacked complementary organic field-effect transistors (FETs) with a high static noise margin (SNM) are reported. In the device structure, a bottom-gate p-type organic FET (PFET) is vertically integrated on a top-gate n-type organic FET (NFET) with the gate shared in-between. A new strategy has been proposed to maximize the SNM b...

2002
Tamotsu Kimura

High speed and low power consumption are vital in ICs for high-speed optical communications systems. Some of the competing IC elements in this field include: Si-BJT (Silicon Bipolar Transistor), Si-CMOS (Silicon Field Effect Transistor), SiGe-BJT (Silicon Germanium Bipolar Transistor), GaAs-HBT (Gallium Arsenide Heterobipolar Transistor), GaAs-FET (Gallium Arsenide Field Effect Transistor), and...

Journal: :Chemical communications 2015
Rafiq Ahmad Nirmalya Tripathy Jin-Ho Park Yoon-Bong Hahn

We report a novel straightforward approach for simultaneous and highly-selective detection of multi-analytes (i.e. glucose, cholesterol and urea) using an integrated field-effect transistor (i-FET) array biosensor without any interference in each sensor response. Compared to analytically-measured data, performance of the ZnO nanorod based i-FET array biosensor is found to be highly reliable for...

Journal: :Nano letters 2010
Jae-Hyuk Ahn Sung-Jin Choi Jin-Woo Han Tae Jung Park Sang Yup Lee Yang-Kyu Choi

A silicon nanowire field effect transistor (FET) straddled by the double-gate was demonstrated for biosensor application. The separated double-gates, G1 (primary) and G2 (secondary), allow independent voltage control to modulate channel potential. Therefore, the detection sensitivity was enhanced by the use of G2. By applying weakly positive bias to G2, the sensing window was significantly broa...

2016
Pankaj Jha P K Sharma

The Field Effect Transistor using nanotechnology is known as Carbon Nanotube Field Effect Transistors (CNTFET). Which promising nano-scaled devices for implementing high performance very dense and low power circuits. A Carbon Nanotube Field Effect Transistor refers to a FET with a single CNT or an array of CNT's as the channel material instead of bulk silicon in the traditional MOSFET structure...

1996
P. C. Pattnaik

Here we propose and analyze the behavior of a FET–like switching device, the Mott transition field effect transistor, operating on a novel principle, the Mott metal–insulator transition. The device has FET-like characteristics with a low “ON” impedance and high “OFF” impedance. Function of the device is feasible down to nanoscale dimensions. Implementation with a class of organic charge transfe...

2011
Dajing Chen Sheng Lei Yuquan Chen

A single polyaniline nanofiber field effect transistor (FET) gas sensor fabricated by means of electrospinning was investigated to understand its sensing mechanisms and optimize its performance. We studied the morphology, field effect characteristics and gas sensitivity of conductive nanofibers. The fibers showed Schottky and Ohmic contacts based on different electrode materials. Higher applied...

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