Field Effect Diode (FED)s are interesting device in providing the higherON-state current and lower OFF–state current in comparison with SOI-MOSFETstructures with similar dimensions. The impact of channel length and band-to-bandtunneling (BTBT) on the OFF-state current of the side contacted FED (S-FED) has beeninvestigated in this paper. To find the lowest effective channel length, this device i...

The critical current of a superconductor can be different for opposite directions flow when both time-reversal and inversion symmetry are broken. Such non-reciprocal behaviour creates superconducting diode has recently been experimentally demonstrated by breaking these symmetries with an applied magnetic field or the construction tunnel junction. Here we report intrinsic effect that is present ...

In a recent experiment [Lin et al., arXiv:2112.07841], the superconducting phase hosted by heterostructure of mirror-symmetric twisted trilayer graphene and WSe$_2$ was shown to exhibit significantly different critical currents in opposite directions absence external magnetic fields. We here develop microscopic theory analyze necessary conditions for this zero-field diode effect. Taking into ac...

The p-n junction diode and field-effect transistor are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of reduced dimensionality materials has suggested that these components can be scaled down to atomic thicknesses. Although high-performance field-effect devices have been achieved from monolayered materials and their heterostruc...

An optimum design with silicon-on-insulator (SOI) device structure was proposed to eliminate back gate bias effect of the lateral double diffused metal-oxide-semiconductor field effect transistor (LDMOSFET) and to improve breakdown voltage. The SOI structure was characterized by low doping buried layer (LDBL) inserted between the silicon layer and the buried oxide layer. The LDBL thickness is a...

Introduction: Nowadays, the main focus of dental studies is on adhesive dental materials; since clinical long-term success of bonded restorations depended more on marginal microleakage minimization. So, the aim of this study was Evaluation of Diode laser irradiation effect on microleakage in class V composite restoration before and after adhesive application. Materials and methods: In this in v...

Gallium nitride (GaN) is an III-V semiconductor with a direct band-gap of 3.4 eV. GaN has important potentials in white light-emitting diodes, blue lasers, and field effect transistors because of its super thermal stability and excellent optical properties, playing main roles in future lighting to reduce energy cost and sensors to resist radiations. GaN nanomaterials inherit bulk properties of ...

Pt/AlGaN/AlN/GaN high electron mobility transistors (HEMT) were fabricated and characterized for hydrogen sensing. Pt and Ti/Al/Ni/Au metals were evaporated to form the Schottky contact and the ohmic contact, respectively. The sensors can be operated in either the field effect transistor (FET) mode or the Schottky diode mode. Current changes and time dependence of the sensors under the FET and ...

Research into organic field effect transistors (OFETs) has made significant advances—both scientifically and technologically—during the last decade, and the first products will soon enter the market. Printed electronic circuits using organic resistors, diodes and transistors may become cheap alternatives to silicon-based systems, especially in large-area applications. A key parameter for device...