Fabricating a low-cost virtual germanium (Ge) template by epitaxial growth of Ge films on silicon wafer with a Ge(x)Si(1-x) (0 < x < 1) graded buffer layer was demonstrated through a facile chemical vapor deposition method in one step by decomposing a hazardousless GeO(2) powder under hydrogen atmosphere without ultra-high vacuum condition and then depositing in a low-temperature region. X-ray ...

New discoveries on collective processes in materials fabrication and performance are emerging in the mesoscopic size regime between the nanoscale, where atomistic effects dominate, and the macroscale, where bulk-like behavior rules. For semiconductor electronics and photonics, dimensional control of the architecture in this regime is the limiting factor for device performance. Epitaxial crystal...

Epitaxy of Al films deposited on GaN has been studied using reflection high-energy electron diffraction ~RHEED!, atomic force microscopy ~AFM!, x-ray diffraction, and ion channeling techniques. Al ~111! films have been found to grow epitaxially on GaN ~0001! surfaces with Al ^21̄ 1̄&iGaN^21̄ 1̄0&. For growth at 15 and 150 °C with a deposition rate of 0.26 Å/s, the epitaxial quality of the film was ...

Epitaxial La0:6Sr0:4MnO3 (LSMO) thin films were grown by pulsed laser deposition. Relationships between magnetic properties of LSMO epitaxial thin films and ablation conditions such as ablated spot area and total incident laser energy in a pulsed laser deposition technique were studied. Ablated spot area was controlled by changing the focus lens position and total laser energy. Epitaxial growth...

Results on epitaxial lateral overgrowth of GaAs layers are reported. The methods of controlling the growth anisotropy, the effect of substrate defects filtration in epitaxial lateral overgrowth procedure and influence of the mask on properties of epitaxial lateral overgrowth layers will be discussed. The case of GaAs epitaxial lateral overgrowth layers grown by liquid phase epitaxy on heavily d...

We have investigated structural and magnetic properties of epitaxial (100) N&Feel0 films grown on relaxed Cu/Si(lOO) seed layers. The crystallographic texture and orientation of these films was analyzed in situ by reflection high energy electron diffraction (RHEED), and M situ by x-ray diffraction and cross-sectional transmission electron microscopy (XTEM). In particular, RHEED intensities were...

Low-temperature epitaxial growth of AlN ultrathin films was realized by atomic layer deposition (ALD) together with the layer-by-layer, in-situ atomic layer annealing (ALA), instead of a high growth temperature which is needed in conventional epitaxial growth techniques. By applying the ALA with the Ar plasma treatment in each ALD cycle, the AlN thin film was converted dramatically from the amo...

We report here the epitaxial growth of III-nitride material on freestanding HfO2 gratings by molecular beam epitaxy. Freestanding HfO2 gratings are fabricated by combining film evaporation, electron beam lithography, and fast atom beam etching of an HfO2 film by a front-side silicon process. The 60-μm long HfO2 grating beam can sustain the stress change during the epitaxial growth of a III-nitr...

In order to calculate the redis tr ibut ion of boron in silicon by both diffusion and autodoping dur ing epitaxial growth, certain materials parameters must be known as a function of temperature. The parameters are the diffusion coefficient of boron, the evaporat ion coefficient of boron from silicon, and the silicon evaporation rate in a hydrogen ambient. The value of the diffusion coefficient...