Controlled silicon structures on the micron to nanometer order have received much attention owing to their potential applications in various fields such as electrochemical, optoelectrical, and biological sciences. Although the techniques commonly used in fabricating nano-/microstructured silicon are conventional lithographic techniques using a resist mask with an optical, electron, or X-ray bea...

Nano-porous silicon were simply prepared from p-type single crystalline silicon wafer by electrochemical etching technique via exerting constant current density in two different HF-Ethanol and HF-Ethanol-H2O solutions. The mesoporous silicon layers were characterized by field emission scanning electron microscopy and scanning electron microscopy. The results demonstrate that the width of nano-p...

The controlled electrochemical etching at room temperature of deep (up to 200 μm) silicon microstructures with aspect ratio ranging from 5 to 100 and etching rates from 10 to 3 μm/min, respectively, is here reported and discussed. This allows silicon microfabrication technology entering a region in the parameter space etching-rate vs. aspect-ratio that was so far unreachable for silicon microst...

The etching of silicon has been studied by the scanning electrochemical microscope (SECM) technique. Etching has been accomplished in acidic fluoride solutions by electrogenerating a strong oxidant, i.e. bromine in this case, at an ultramicroelectrode which was held closely above a silicon (1 11) wafer. The parameters that affect the process and control the efficiency of the silicon etching wer...

An electrochemical etching technique has been developed that provides continuous control over the porosity of a porous silicon layer as a function of etching depth. Thin films with engineered porosity gradients, and thus a controllable gradient in the index of refraction, have been used to demonstrate broadband antireflection properties on silicon wafer and solar cell substrates. A simulation w...

CR-39 Solid State Nuclear Track Detecting foils (SSNTD), along with 1 mm thick polyethylene radiator, sealed in triple laminated pouches, are used for country wide Fast Neutron Personnel Monitoring in India. With the present system of processing by elevated temperature electrochemical etching (ETECE) and evaluation using automatic image analysis, only 16 foils are processed at a time and it is ...

Porous GaAs layers have been produced by electrochemical anodic etching of (100) heavily doped p-type GaAs substrate in HF solution. Scanning electron microscopy revealed the presence of etch pits ranging in size from 0.01 to 2 mm and they were strongly dependent on the electrochemical etching conditions. The etch pits chemical composition consists of O, Ga and As whereas the porous structure c...

in this research work nano porous silicon layers with different porosity were prepared by using electrochemical etching. surface morphology and size of pores were investigated by scanning electron microscopy (sem).tio2 thin films with ebpvd method have been deposited on the surface of psi layers. the influence of anodization conditions such as anodization time interval and current density on el...