Organic field-effect transistors (OFETs) were first described in 1987. Their characteristics have undergone spectacular improvements during the last two or three years. At the same time, several models have been developed to rationalize their operating mode. In this review, we examine the performance of OFETs as revealed by recently published data, mainly in terms of field-effect mobility and o...

This chapter aims to provide the reader with a practical knowledge about electrical methods to measure organic thin film transistor devices. It presents a series of recipes, which allow the experimentalist to gain insight into the performance and limitations of the devices and circuits being measured. It also gives guidelines on how to correctly interpret the measurements and to provide feedbac...

Over the past twenty years, research into the applications of organic semiconductors (OSCs) has intensified rapidly. Though their electron mobility is much lower than that of typical semiconductors, OSCs show promise in low-cost, flexible, lightweight, and environmentally-friendly semiconductor applications. Their hole mobility was found to be comparable to that of amorphous silicon (a-Si), wit...

Articles you may be interested in Graphene nanopore field effect transistors Self-aligned graphene field-effect transistors with polyethyleneimine doped source/drain access regions Appl.

ἀ ere are several different types of field effect transistors (FETs), each of which has a different operational principle. For example, there are metal oxide semiconductor (MOS) transistors, junction field effect transistors (JFETs), static induction transistors (SITs), the punch-through transistors (PHTs), and others. All of these devices employ the flow of majority carriers. ἀ e most popular ...

Articles you may be interested in Evaluation of pulsed laser annealing for flexible multilayer MoS2 transistors Appl. Schottky-barrier lowering in silicon nanowire field-effect transistors prepared by metal-assisted chemical etching Appl. Measurement of low Schottky barrier heights applied to metallic source/drain metal–oxide–semiconductor field effect transistors

in this paper, the morphology, roughness and nano structural properties of sio2/poly vinyl pyrrolidone  synthesized with sol gel method,  characterized by using scanning electron microscopy, atomic force microscopy and gps132a techniques.the main material taken from oxide silicon with weight percentage of 20, 40, 60, 80 and from poly vinyl pyrrolidone with percentages of 80, 60, 40, 20 is synth...

We report results of the analytical and numerical investigation of self-heating effects in GaN-based high-power field-effect transistors. The problem of heat transfer in a transistor structure has been solved both analytically, using the method of images, and numerically. Two-dimensional electrothermal simulations of the GaN metal-semiconductor field-effect transistors on SiC and sapphire subst...

Dimensionality in metal-oxide-semiconductor field-effect transistors: A comparison of one-dimensional and two-dimensional ballistic transistors" (2008). One-dimensional ͑1D͒ and two-dimensional ͑2D͒ metal-oxide-semiconductor field-effect transistors are compared using an approach based on the top-of-the-barrier ballistic transport model. The results for model devices show that 1D and 2D transistors...

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