In this paper, we propose a new heterostructure dual material gate junctionless field-effect transistor (H-DMG-JLFET), with negative differential resistance (NDR) characteristic. The drain and channel material are silicon and source material is germanium. The gate electrode near the source is larger. A dual gate material technique is used to achieve upward band bending in order to access n-i-p-...

Related Articles Polarization mechanism and quasi-electric-double-layer modeling for indium-tin-oxide electric-double-layer thinfilm-transistors Appl. Phys. Lett. 100, 113506 (2012) High ON/OFF ratio and multimode transport in silicon nanochains field effect transistors Appl. Phys. Lett. 100, 113108 (2012) Integrated on-chip inductors with electroplated magnetic yokes (invited) J. Appl. Phys. 1...

Achieving small transverse beam emittance is important for high brightness cathodes for free electron lasers and electron diffraction and imaging experiments. Double-gate field emitter arrays with on-chip focussing electrode, operating with electrical switching or near infrared laser excitation, have been studied as cathodes that are competitive with photocathodes excited by ultraviolet lasers,...

the performance of nanoscale field effect diodes as a function of the spacer length between two gates is investigated. our numerical results show that the ion/ioff ratio which is a significant parameter in digital application can be varied from 101 to 104 for s-fed as the spacer length between two gates increases whereas this ratio is approximately constant for m-fed. the high-frequency perform...

High leakage currents and short channel effects become significant enough to be the major concerns for circuit designers as semiconductor devices are miniaturized. Tunnel field effect transistor(TFET) show good scalability and have very low leakage current .These transistors have very low leakage current, good sub-threshold swing, improved short channel characteristics and lesser temperature se...

The potential of graphene-based materials consisting of one or a few layers of graphite for integrated electronics originates from the large room-temperature carrier mobility in these systems (approximately 10,000 cm2 V(-1) s(-1)). However, the realization of electronic devices such as field-effect transistors will require controlling and even switching off the electrical conductivity by means ...