In this work, two p-cyanophenyl end-capped oligothiophenes, and , were compared as dopants in the P3HT:PC60BM bulk heterojunction (BHJ) layer of inverted organic solar cells. Inclusion of significantly increased the average efficiency of the solar cells, while the increase using doping in the cell efficiency was minor. In the BHJ photoactive layer, the dopant molecules are close to and interact...

A centrality measure based on the time of first returns rather than the number of steps is developed and applied to finding proton traps and access points to proton highways in the doped perovskite oxides: AZr(0.875)D(0.125)O3, where A is Ba or Sr and the dopant D is Y or Al. The high centrality region near the dopant is wider in the SrZrO3 systems than the BaZrO3 systems. In the aluminum-doped...

An experimental setup has been developed for successive photo-electrochemical etch and EIS measurement of semiconductor samples. Furthermore an algorithm based on electrochemical capacitance-voltage (ECV) has been developed for calculating dopant profile based on the measurements by developed setup. Phosphorous diffusion profile in p-type silicon was estimated by employing developed setup and a...

In the present study, we investigated the role of an aliovalent dopant upon stabilizing the amorphous oxide film. We added beryllium into the Zr50Cu50 metallic glass system, and found that the amorphous oxide layer of Be-rich phase can be stabilized even at elevated temperature above Tg of the glass matrix. The thermal stability of the amorphous oxide layer is substantially enhanced due to Be a...

To achieve and use the most exotic electronic phenomena predicted for the surface states of 3D topological insulators (TIs), it is necessary to open a "Dirac-mass gap" in their spectrum by breaking time-reversal symmetry. Use of magnetic dopant atoms to generate a ferromagnetic state is the most widely applied approach. However, it is unknown how the spatial arrangements of the magnetic dopant ...

Low field ion mobility spectrometry-mass spectrometry (IMS-MS) techniques exhibit low orthogonality, as inverse mobility often scales with mass to charge ratio. This inadequacy can be mitigated by adding vapor dopants, which may cluster with analyte ions and shift their mobilities by amounts independent of both mass and mobility of the ion. It is therefore important to understand the interactio...

Linear and nonlinear refractive index, Abbe number, electronic energy gap and oscillator strength are reported for a new series of (Mg, Ba)F2-based fluorophosphates glasses (MBBA system) doped with rare earth dopants (Er , Nd) in the concentration range of 6.67x10 2.86x10 (ions/cm) and 2.5x10 1.25x10 (ions/cm), respectively. The linear refractive index is found to increase with increasing dopan...

One consequence of the continued downward scaling of transistors is the reliance on only a few discrete atoms to dope the channel, and random fluctuations in the number of these dopants are already a major issue in the microelectronics industry. Although single dopant signatures have been observed at low temperatures, the impact on transistor performance of a single dopant atom at room temperat...

Grain boundary mobility of CeO, containing 0.1% and 1.0% trivalent dopant cations (Sc, Yb, Y, Gd, and La, in order of increasing ionic radius) has been measured. At the lower dopant concentration (intrinsic regime), mobility is controlled by grain boundary diffusion of host cations, whereas at the higher dopant concentration (extrinsic regime), mobility is controlled by solute drag through the ...

We identified p-type nanoscale dopant-induced dots that are formed by fluctuations of the dopant atom distribution in sufficiently thin GaAs p – n multilayers. Their electronic structure and the resulting potential variations were investigated by cross-sectional scanning tunneling microscopy and spectroscopy as a function of the number of dopant atoms within the dot. We find significant changes...