In this research, the effect of the first order magnetic field on the ground-state of a centered hydrogenic donor impurity in a GaAs/AlAs spherical quantum dot has been calculated. The perturbation method has been used within the framework of effective mass approximation for these calculations. Overall, the analysis shows that a proper choice of quantum dot radius and magnetic field can signifi...

In this research, the effect of the first order magnetic field on the ground-state of a centered hydrogenic donor impurity in a GaAs/AlAs spherical quantum dot has been calculated. The perturbation method has been used within the framework of effective mass approximation for these calculations. Overall, the analysis shows that a proper choice of quantum dot radius and magnetic field can signifi...

The Rashba spin-orbit splitting of a hydrogenic donor impurity in GaAs/GaAlAs quantum wells is investigated theoretically in the framework of effective-mass envelope function theory. The Rashba effect near the interface between GaAs and GaAlAs is assumed to be a linear relation with the distance from the quantum well side. We find that the splitting energy of the excited state is larger and les...

Based on the finite difference method, linear optical susceptibility, photoluminescence peak and binding energies of three first states an exciton trapped by a positive charge donor-impurity ( ) confined in InN/AlN quantum well are investigated terms size impurity position. The electron, heavy hole free bound excitons allowed eigen-values corresponding eigen-functions obtained numerically solvi...

Emerging STM technology opens the possibility of creating ultra-high doped silicon devices. For the theoretical analysis of Si:P QW devices, an atomistic tight-binding approach with self-consistent potential calculation is used. Fermi-level, 1Γ, 2Γ and 1∆ bands are of the same order with previous studies. Impurity bands can be simply explained by the band projection of silicon bulk bandstructur...

in this research, the effect of the first order magnetic field on the ground-state of a centered hydrogenic donor impurity in a gaas/alas spherical quantum dot has been calculated. the perturbation method has been used within the framework of effective mass approximation for these calculations. overall, the analysis shows that a proper choice of quantum dot radius and magnetic field can signifi...

We study the mutual passivation of shallow donor and isovalent N in GaAs. We find that all the donor impurities, SiGa, GeGa, SAs, and SeAs, bind to N in GaAs:N, which has a large N-induced band-gap reduction relative to GaAs. For a group-IV impurity such as Si, the formation of the nearest-neighbor SiGa-NAs defect complex creates a deep donor level below the conduction band minimum (CBM). The c...

Lan Qing,1,2 Jing Li,2 Ian Appelbaum,2,* and Hanan Dery1,3 1Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627, USA 2Department of Physics, Center for Nanophysics and Advanced Materials, University of Maryland, College Park, Maryland 20742, USA 3Department of Electrical and Computer Engineering, University of Rochester, Rochester, New York 14627, USA (Receiv...