Silicon samples doped with gallium and intentionally contaminated with iron have been studied by means of electron beam current (EBIC), capacitance voltage (CV) and deep level transient spectroscopy (DLTS) methods. Reverse bias anneal (RBA) treatments at temperatures of 390-420K were used to move hydrogen and dissolved iron atoms away from the surface. A new procedure was developed to find disl...

Perilunate dislocations, lunate dislocations and perilunate fracture dislocations are rare injuries comprising of less than 10% of all wrist injuries. Volar peri-lunate dislocations (VPLDs) account for less than 3% of perilunate dislocations. These severe carpal injuries occur after high-energy trauma to the wrist and falls on the outstretched hand. We present a case of a missed VPLD who develo...

The growth of slant cracks by fretting fatigue of a half plane in contact with a flat rounded pad was studied. The mode I and mode II stress intensity factors for cracks of various lengths and directions were calculated using the semi-analytical method of the distribution of dislocations, and their cumulative effect on the crack growth was investigated using the strain energy density criterion....

A thin film of heavily B-doped diamond has been grown epitaxially by microwave plasma chemical vapor deposition on an undoped diamond layer, on top of a Ir/YSZ/Si(001) substrate stack, to study the boron segregation and boron environment at the dislocations present in the film. The density and nature of the dislocations were investigated by conventional and weak-beam dark-field transmission ele...

The dynamics of edge dislocations with parallel Burgers vectors, moving in the same slip plane, is mapped onto Dyson's model of a two-dimensional Coulomb gas confined in one dimension. We show that the tail distribution of the velocity of dislocations is power law in form, as a consequence of the pair interaction of nearest neighbors in one dimension. In two dimensions, we show the presence of ...

The paper addresses the problem of correlation within an array of parallel dislocations in a crystalline solid. The first two of a hierarchy of equations for the multi-point distribution functions are derived by treating the random dislocation distributions and the corresponding stress fields in an ensemble average framework. Asymptotic reasoning, applicable when dislocations are separated by s...

Scanning capacitance microscopy (SCM), atomic force microscopy (AFM), and conductive AFM are used to image the spatial distribution and electronic properties of threading dislocations in AlxGa1 xN/GaN epitaxial layers grown by molecular-beam epitaxy. SCM imaging reveals that GaN growth directly on SiC substrates leads to clustering of negatively charged dislocations at nucleation island boundar...

A 2-d dislocation pile-up model is developed to solve problems with arrays of edge dislocations on one or multiple slip planes. The model developed in this work has four unique features: 1) As a continuum mechanics model, it captures the discrete behaviors of dislocations including the region near pile-up boundaries. 2) It allows for a general distribution of dislocations and applied boundary c...