This article describes the process of transferring an 850 nm VCSEL structure to devices emitting at 895 nm, a wavelength required for cesium-based atomic clocks. We discuss all the effects to be considered and present photoluminescence measurements of the modified quantum well structure. In addition, the influence of δ-doping in distributed Bragg reflectors on VCSEL characteristics, namely thre...

The longwave phenomenological model is used to make simple and precise calculations of various physical quantities such as the vibrational energy density, the vibrational energy, the relative mechanical displacement, and the one-dimensional stress tensor of a porous silicon distributed Bragg reflector. From general principles such as invariance under time reversal, invariance under space reflec...

For help in preparation of this article, thanks to Ballard Andrews, Soraya Betancourt, Denise Freed and Martin Hürlimann, Cambridge, Massachusetts, USA; Myrt E. Cribbs, Chevron Energy Technology Company, Houston; Tara Davies, James Du and Ray Kennedy, Edmonton, Alberta, Canada; Peter Eichelberger, Adomite Chemicals, Nalco Energy Services L.P., Sugar Land, Texas; Doris Gonzalez, Houston; Gregory...

A monolithically integrated device combines 40 GHz dual mode-locked operation with the wide tuning range (>40nm) of sampled-grating DBR lasers, while further being integrated to an SOA and a potentially high-speed modulator. OCIS codes: (250.5300) Photonic integrated devices; (140.3600) Lasers, tunable; (140.4050) Mode-locked lasers

Attempts to commercialize GaN VCSELs have been unsuccessful to date due to the challenges of manufacturability of DBR mirrors, difficulties associated with current blocking, and the complexity of laser liftoff. The new process flow overcomes all three challenges enabling the manufacturing of IIINitride VCSEL without liftoff and with much reduced complexity and the possibility of on-wafer testing.

Attempts to commercialize GaN VCSELs have been unsuccessful to date due to the challenges of manufacturability of DBR mirrors, difficulties associated with current blocking, and the complexity of laser liftoff. The new process flow overcomes all three challenges enabling the manufacturing of IIINitride VCSEL without liftoff and with much reduced complexity and the possibility of on-wafer testing.

We consider distance-based registration (DBR). DBR causes a mobile station (MS) to reregister when the distance between the current base station (BS) and the BS with which it last registered exceeds a distance threshold. The addition of implicit registration to DBR (DBIR) was proposed to improve the performance of DBR, and its performance has also been presented using a continuous-time Markov c...

Chirp compensation is demonstrated using voltage division to a long-section electroabsorption phase modulator together with an amplitude modulator arranged in a tandem configuration, both integrated with an SOA and a sampled-grating DBR laser.

Attempts to commercialize GaN VCSELs have been unsuccessful to date due to the challenges of manufacturability of DBR mirrors, difficulties associated with current blocking, and the complexity of laser liftoff. The new process flow overcomes all three challenges enabling the manufacturing of IIINitride VCSEL without liftoff and with much reduced complexity and the possibility of on-wafer testing.

This paper reports on one cycle of a design-based research (DBR) study in which mCSCL was explored through an iterative process of (re)designing and testing the collaboration and learning approach with students. A unique characteristic of our mCSCL approach is the student-led emergent formation of groups. The mCSCL application assigns each student a component of a Chinese character and requires...