نتایج جستجو برای: density functional tight binding

تعداد نتایج: 1348279  

Journal: :Nanoscale 2021

We present the first application of time-dependent density functional tight-binding method to rationalize photo-induced electron transfer in an experimental hexyl-protected Au25 cluster labeled with a pyrene fluorophore.

The electrical properties and rectification behavior of the graphene self-switching diodes by side gates doping with nitrogen and boron atoms were investigated using density functional tight-binding method. The devices gates doping changes the electrical conductivity of the side gates and the semiconductor channel nanoribbons. As a result, the threshold voltage value under the forward bias is s...

Journal: :international journal of nano dimension 0
t. farajollahpour department of physics, faculty of science, i.h.u tehran, iran. a. rezvani department of physics, faculty of science, i.h.u tehran, iran. m. r. khodarahmi department of physics, faculty of science, i.h.u tehran, iran. m. arasteh department of physics, faculty of science, i.h.u tehran, iran.

in this paper energy bands and berry curvature of graphene was studied. desired hamiltonian regarding the next-nearest neighbors obtained by tight binding model. by using the second quantization approach, the transformation matrix is calculated and the hamiltonian of system is diagonalized. with this hamiltonian, the band structure and wave function can be calculated. by using calculated wave f...

Journal: :Journal of Computational Electronics 2023

Abstract The calculation of the electron–phonon coupling from first principles is computationally very challenging and remains mostly out reach for systems with a large number atoms. Semi-empirical methods, like density functional tight binding (DFTB), provide framework obtaining quantitative results at moderate computational costs. Herein, we present new method based on DFTB approach computing...

2011
Y. Wang

An approximate method based on adiabatic time dependent density functional theory (TDDFT) is presented, that allows for the description of the electron dynamics in nanoscale junctions under arbitrary time dependent external potentials. In this scheme, the density matrix of the device region is propagated according to the Liouville-von Neumann equation. The semi-infinite leads give rise to dissi...

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