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We present results on the in situ, two-dimensional growth sas opposed to the more commonly encountered island-coalescence mechanismd of continuous epitaxial Cu2O films on MgOs011d using dc facing-magnetron sputtering from metallic Cu targets in an oxygen/argon atmosphere. Film growth was studied as a function of deposition time and the dc power applied to the guns. Control of the latter leads t...

AlN thin film was prepared over different metal substrates using DC sputtering at various sputtering parameters. The XRD spectra revealed the presence of mixed (cubic and hexagonal) phases for all samples other than samples prepared at 300W with Ar:N2 gas ratio of 14:6. The intensities of cubic phases observed at copper (Cu) substrates increased drastically with high sputtering power and N2 gas...

Using a combinatorial approach, Cr, Al and C have been deposited onto sapphire wafer substrates by High Power Impulse Magnetron Sputtering (HiPIMS) and DC magnetron sputtering. X-ray photoelectron spectroscopy, X-ray absorption spectroscopy and X-ray diffraction were employed to determine the composition and microstructure of the coatings and confirm the presence of the Cr2AlC MAX phase within ...

We study electron emission and sputtering during irradiation of amorphous water ice at 60 K by HC, DC, He+, Li+, Be+, B+, C+, N+, O+, F+, and Ne+ ions in the energy range from 10 to 100 keV. We find that for constant velocity (5 keV/amu) ions the dependence of the sputtering yields with projectile atomic number Z is proportional to the square of the Z-dependence of the electronic stopping power...

We report the experimental observation of room-temperature perpendicular magnetic anisotropy in Ni/Pt multilayers having 7–26 Å Ni and 2.3–4.6 Å Pt layer thicknesses, prepared by dc magnetron sputtering on glass substrates at 7 mTorr Ar sputtering pressure. Perpendicular magnetic anisotropy was found to be sensitively dependent on both Niand Pt-layer thicknesses, and a maximum anisotropy energy...

Reactive co-sputtering is a means to create films of customized or graded index of refraction. This gives the optical coating designer new options, and enables practical realization of new classes of coatings. Two neighboring targets may be sputtered such that material from both targets and reactive gas are incident on the workpiece, depositing a film consisting of a compound. For example, if o...

The inner surface of the ring vacuum chambers of the US Spallation Neutron Source (SNS) will be coated with ~100 nm of Titanium Nitride (TiN). This is to minimize the secondary electron yield (SEY) from the chamber wall, and thus avoid the so-called e-p instability caused by electron multipacting as observed in a few high-intensity proton storage rings. Both DC sputtering and DCmagnetron sputte...

Sputter deposition process is another old technique being used in modern semiconductor industries. Sputtering is a process that can deposit TiO2 material on wafer/glass substrates. In this process target is connected to negative high voltage. Further argon gas is introduced into the chamber and is ionized to a positive charge. The positively charged argon atoms are attracted and strike the nega...