It is known that conventional metal-oxide-silicon ~MOS! devices will have gate tunneling related problems at very thin oxide thicknesses. Various high-dielectric-constant materials are being examined to suppress the gate currents. In this article we present theoretical results of a charge control and gate tunneling model for a ferroelectric-oxide-silicon field effect transistor and compare them...

In this paper, a power laterally-diffused metal-oxidesemiconductor field-effect transistor (LDMOSFET) on In0.53Ga0.47As is presented. The device utilizes a thicker field-oxide with low dielectric constant under the field-plate in order to achieve possible reduction in device capacitances and reduced-surface-field effect. Using 2D numerical simulations, performance of the proposed device is anal...

We present cross-talk calculations for a subdiffraction nanophotonic waveguide that consists of a colloidal quantum dot (QD) array 10 nm in diameter and compare the results with conventional continuous dielectric waveguides, assuming the same 10 nm size as well as a 200 nm cutoff diameter for guided mode. We find that the QD cascade has much lower cross talk than 10 nm dielectric waveguides at ...

Thus far, the measurement of dielectric properties of biological tissues has been achieved on the assumption that the biological tissues are homogeneous. In fact, most tissues should be heterogeneous because there are many small structures included in these tissues, such as blood vessel, nerve fiber and so on. When the dielectric properties of these tissues are measured by conventional sensor, ...

We demonstrate the fabrication of solid-state dielectric energy storage materials from selfassembled, aligned single-walled carbon nanotube arrays (VA-SWNTs). The arrays are transferred as intact structures to a conductive substrate and the nanotubes are conformally coated with a thin metal-oxide dielectric and a conductive counter-electrode layer using atomic layer deposition. Experimental res...

A generalized Born (GB) model is proposed that approximates the electrostatic part of macromolecular solvation free energy over the entire range of the solvent and solute dielectric constants. The model contains no fitting parameters, and is derived by matching a general form of the GB Green function with the exact Green's function of the Poisson equation for a random charge distribution inside...

Bi5−xLaxTiNbWO15 x=0–1.50 ceramics prepared by conventional solid-state reaction were studied using x-ray diffraction XRD , dielectric spectroscopy and Raman scattering techniques. The XRD analysis implied that single-phase intergrowth bismuth layered perovskite structure was obtained for all the samples and when x=0.75, the Bi3+ in Bi2O2 2+ layer begins to be substituted by La3+. The dielectri...

Agricultural waste ashes are used as resource materials to synthesize new glass and glass-ceramics. The as-prepared materials are characterized using various techniques for their structural and dielectric properties to check their suitability in microelectronic applications. Sugarcane leaves ash exhibits higher content of alkali metal oxides than rice husk ash, which reduces the melting point o...

We have fabricated advanced metal–insulator–metal (MIM) capacitors with ultra-thin (200 Å) remote-PECVD Si3N4 dielectric layers having excellent electrical properties. The breakdown field strength of MIM capacitors with 200-Å-thick Si3N4 was larger than 3.5 MV/cm, which indicates the excellent quality of the deposited Si3N4 film. The main capacitance per unit area extracted by radio frequency (...

The low dielectric constants of conventional organic semiconductors leads to poor charge carrier photogeneration in homojunction organic solar cells due to large exciton binding energies. Increasing the dielectric constant can potentially enhance the spontaneous exciton dissociation rate at room temperature in homojunction cells, and decrease the charge carrier recombination in heterojunction s...