An electrically pumped Sb-doped ZnO nanowire/Ga-doped ZnO p-n homojunction random laser is demonstrated. Catalyst-free Sb-doped ZnO nanowires were grown on a Ga-doped ZnO thin film on a Si substrate by chemical vapor deposition. The morphology of the as-grown titled nanowires was observed by scanning electron microscopy. X-ray photoelectron spectroscopy results indicated the incorporation of Sb...

In this work, nanostructured TiO2 and Cr-doped TiO2 thin films were deposited on glass substrate through sonochemical-chemical vapor deposition (CVD) method. The resulting thin films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), UV-visible absorption spectroscopy, and photoluminescence spectroscopy techniques. The TiO2 thin film has nanocubic morphology and ...

in this work we report synthesis and magnetic characterization of cobalt doped zno nanoparticles (with different percent of doped cobalt oxide). synthesis of the materials was carried out at room temperature by polyacrylamide-gel method, using zink sulfate and cobalt nitrate as source materials, acrylamide as monomer and n,n-methylene bisacrylamide as a lattice reagent. characterization of the ...

In this work, pure and different metal ions doped ZnO thin films were obtained by a facile electrochemical deposition process. Different morphologies of ZnO, such as nanoplates, nanoparticles, as well as dense film can be obtained by doping Cu, In, and Al, respectively. Besides, the electrical properties of ZnO were also dependent on the doping ions. In this work, only pure ZnO shows resistive ...

The electrical resistivity values for a series of pure and doped (Co, Mn, Al) ZnO epitaxial films grown by pulsed laser deposition were measured with equipment designed for determining the direct current resistivity of high resistance samples. Room-temperature resistances ranging from 7 x 10(1) to 4 x 10(8) Omega/sq were measured on vacuum-reduced cobalt-doped ZnO, (Al,Co) co-doped ZnO, pure co...

Based on a novel Al-doped ZnO thin film/ZnO single crystal system, the effects of interface electric field on photocatalysis were investigated in detail. Both the position and intensity of the electric field are found to have decisive influence on the photocatalytic activities.

ZnO, Al-doped ZnO (AZO), and Ga-doped ZnO (GZO) semiconductor thin films were deposited on glass substrates via a sol-gel spin-coating process for application in a photoconductive ultraviolet (UV) detector. The doping concentrations of Al and Ga were 1.0 at % in the precursor solutions. In this study, the microstructural features and the optical and electrical properties of sol-gel-derived ZnO,...

Metal-doped ZnO [MZO] thin films show changes of the following properties by a dopant. First, group III element (Al, In, Ga)-doped ZnO thin films have a high conductivity having an n-type semiconductor characteristic. Second, group I element (Li, Na, K)-doped ZnO thin films have high resistivity due to a dopant that accepts a carrier. The metal-doped ZnO (M = Li, Ag) films were prepared by radi...

Gallium doped zinc oxide (GZO) thin films have been prepared by a simple sol–gel spin coating technique. XRD results showed the preferential c-axis orientation of the crystallites and the presence of the wurtzite phase of ZnO. A lowest resistivity of 3.3 × 10−3 cm was obtained for the ZnO film doped with 2 at% of Ga after post-annealing at 500 ◦C for 45 min in a H2 atmosphere. All the films sho...

Doped ZnO layers deposited by Low Pressure Chemical Vapour Deposition technique have been studied for their use as transparent contact layers for thin-film silicon solar cells. The effect of a variation in the doping level of the front LP-CVD ZnO on solar cell performance is investigated. Based on these experimental results, authors propose to evaluate the effect of the different ZnO layer prop...