objectives to investigate the role of cgs21680, a selective adenosine a2a receptor agonist, on a bile-duct-ligated cirrhotic liver resection model in rats. methods male wistar rats were allotted into 3 groups (n = 7 per time-point): the control group, the bile duct ligation + cgs21680 group (bdl + cgs), and the bile duct ligation group (bdl). biliary cirrhosis had been previously induced by lig...

From the Lung Station (Tufts), Tufts Medical Service, Boston City Hospital, Boston, Massachusetts and Department of Surgery, Harvard Medical Snhoo!, and the Transplant Division, Sears Surgical Laboratory, Boston City Hospital, Boston Massachusetts. Requests for reoNs should be a? dressed to or. Earle B. Weiss, Lung Station (Tufts), Boston City Hospital, 818 Harrison Avenue, Boston, Massachusett...

A linear stacked field-effect transistor (FET) power amplifier (PA) is implemented using a 0.18-μm silicon-on-insulator CMOS process for W-CDMA handset applications. Phase distortion by the nonlinear gate-source capacitance (Cgs) of the common-source transistor, which is one of the major nonlinear sources for intermodulation distortion, is compensated by employing a PMOS linearizer with improve...

Now a day’s Railway systems plays a key role in transportation in the world. The demands for the trains are increasing drastically. The demand also increases the update of technology day to day. The train journey should be more secure. One of the problems in railway transportation is gate control system. Presently in railways the gate is controlled by manpower. Whenever the train arrives, that ...

This paper presents an efficient physics-based electro-thermal model that solves some advanced problems of modeling Silicon Carbide (SiC) power MOSFETs. It is the first simulates temperature dependency and third quadrant characteristics, including reverse recovery body diode accurately efficiently. extends from a previous work demonstrated isothermal gate-dependent diode. Physics-based scaling ...

The authors’ present a silicon-on-insulator (SOI) laterally diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) with β-Ga2O3 , which is large bandgap semiconductor (β-LDMOSFET), for increasing breakdown voltage (VBR) and power figure of merit. fundamental purpose to use instead silicon material due its field. characteristics β-LDMOSFET are analysed those standard LDMOSFET, suc...

The present work attempts to automate the opening and closing of gates at a railway level crossing. In general, level crossing gates are operated manually by a gate keeper. The gate keeper receives the information about the train arrival from a near station. When the train starts to leave the station, the station in-charge delivers this information to the closest gatekeeper to get ready. This h...

The properties of GaN and AlN and their heterostructures have encouraged the research of AlGaN/GaN based transistors for various applications in the last decade. Consequently, outstanding results have been reported for depletion-mode high electron mobility transistors (DHEMT) in recent years. However, for several applications (both analog and digital) enhancement-mode devices (EHEMT) are essent...