In ‘atomistic’ device simulation the resolving of discrete charges onto a fine grained simulation mesh can lead to problems. The sharply resolved coulomb potential can cause simulation artefacts to appear in classical simulation environments using Boltzmann or Fermi-Dirac statistics. Various methods have been proposed in an effort to reduce or eliminate artefacts such as the trapping of mobile ...

In ‘atomistic’ device simulation the resolving of discrete charges onto a fine-grained simulation mesh can lead to problems. The sharply resolved Coloumb potential can cause simulation artefacts to appear in classical simulation environments using Boltzmann or Fermi–Dirac statistics. Various methods have been proposed in an effort to reduce or eliminate such artefacts as the localisation of mob...

introduction althoughthere is a consensus that the economic burden of burn injury is high, but few studies have conducted about cost of burns injury among pediatric in developing countries. we explored the main factors influencing on hospital costs and length of stay (los) associated with pediatric burns injury in kermanshah, iran. methods and material we performed a review ofmedical records fr...

In carrier multiplication, the absorption of a single photon results in two or more electron-hole pairs. Quantum dots are promising materials for implementing carrier multiplication principles in real-life technologies. So far, however, most of research in this area has focused on optical studies of solution samples with yet to be proven relevance to practical devices. Here we report ultrafast ...

A partial composite consisting of rough silicon nanowires and a polymer dielectric layer with sufficient Na(+) ions was used to create a field-effect transistor based memory device. Addition of Na(+) ions helped compensate for water molecule trapped charges leading to narrow hysteresis characteristics and stable memory retention stability of the resulting device.

We consider the problem of shot noise in resonant tunneling through double quantum dots in the case of interacting particles. Using a many-body quantum mechanical description we evaluate the energy dependent transmission probability, the total average current and the shot noise spectrum. Our results show that the obtained reduction of the noise spectrum, due to Coulomb interaction, can be inter...

The electrical properties of a device with an Al /Alq3/nanostructured MoO3 /Alq3 /p+-Si structure were investigated for organic resistance switching memories. The conductance of the device can be electrically switched to either high conductance or low conductance. The bistable switching of the device is attributed to the MoO3 nanoclusterlike layer interposed between the Alq3 thin films. When th...

Charge-trap non-volatile memory devices based upon the precise integration of quantum dot storage elements with silicon nanowire field-effect transistors are described. Template-assisted assembly yields an ordered array of FeO QDs within the trenches that separate highly aligned SiNWs, and injected charges are reversibly stored via Fowler-Nordheim tunneling into the QDs. Stored charges shift th...