نتایج جستجو برای: channel thickness
تعداد نتایج: 330602 فیلتر نتایج به سال:
This paper has studied drain induced barrier lowering(DIBL) for Double Gate MOSFET(DGMOSFET) using analytical potential model. Two dimensional analytical potential model has been presented for symmetrical DGMOSFETs with process parameters. DIBL is very important short channel effects(SCEs) for nano structures since drain voltage has influenced on source potential distribution due to reduction o...
Ultra Thin Body (UTB) MOSFETs offer a solution to the extreme challenges facing the scaling of single gate MOSFETs to nanometre dimensions [1]. Working UTB transistors with a channel length of 6 nm have been successfully demonstrated already [2]. It is clear, however that in order to achieve a reasonable electrostatic integrity at channel lengths smaller than 10 nm the silicon channel thickness...
0026-2714/$ see front matter 2011 Elsevier Ltd. A doi:10.1016/j.microrel.2011.07.018 ⇑ Corresponding author. Tel.: +82 2 2123 4619; fax E-mail address: [email protected] (I. Yun). Here, we report on the effects of channel (or active) layer thickness on the bias stress instability of InGaZnO (IGZO) thin-film transistors (TFTs). The investigation on variations of TFT characteristics under the ele...
The combination of channel mobility enhancement techniques such as strain engineering, with non-classical MOS device architectures, such as ultra-thin body or multiple-gate structures, offers the promise of maximizing current drive while maintaining the electrostatic control required for aggressive device scaling in future CMOS technology nodes. Two structures that combine strain engineering an...
Mini-channel (D = 2.54 mm) and micro-channel (D = 510 pm) heat sinks with a 1-cm heated surface were tested for their high heat flux performance with flow boiling ofR-113. Experimental results yielded CHF values in excess of 200 W cm~ for flow rates less than 95 ml min~ (0.025 gpm) over a range of inlet subcooling from 10 to 32° C. Heat diffusion within the heat sink was analyzed to ascertain t...
This work presents a new method of fabricating implantable multielectrode arrays on lightly doped single-crystal silicon. Such arrays are essential tools for electrical stimulation and recording of nerve signals. Our new microfabrication process, based on silicon-on-insulator (SOI) technology, inherently has excellent control over the final probe thickness without wet etching. The needle shanks...
New experimentals work were conducted to study the effects of sediment deposits’ thickness on the incipient motion of particles in a rigid rectangular channel. The results show that the deposits’ thickness significantly affects the channel’s ability to erode the sediment deposits. New equations were derived taking into account the effects of deposits’ thickness.
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Equal channel angular rolling (ECAR) process is one of the severe plastic deformation (SPD) methods that have been used to make ultra-fine grain (UFG) materials with improving the mechanical properties of samples. After performing the process at several paths, a large strain is applied to the material that can cause decreasing the grain size and improving the mechanical and physical properties ...
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