نتایج جستجو برای: chamotte sic

تعداد نتایج: 13161  

2017
Yintang Yang Baoxing Duan Song Yuan Hujun Jia

Silicon Carbide (SiC) is believed to be a revolutionary semiconductor material for power devices of the future; many SiC power devices have emerged as superior alternative power switch technology, especially in harsh environments with high temperature or high electric field. In this chapter, the challenges and recent develop‐ ments of SiC power devices are discussed. The first part is focused o...

Journal: :Afyon Kocatepe University Journal of Sciences and Engineering 2022

Perlite is a type of volcanic glass that formed in nature as result the cooling magma lava and contains water droplets its structure. It raw material not harmful to health, environmentally friendly, easy use because it produced at high temperatures. The properties this enable be used many fields industry have factors determining study titled "Investigation Added Ceramic Body Properties". In art...

2018
Guo-Bin Sano Hideaki Uchiyama Guo-Bin Zheng Hideaki Sano Yasuo Uchiyama

A carbon nanotube-enhanced SiC (CNT-SiC) coating was deposited on C/C composites to improve the oxidation resistance of C/C. The CNT-SiC coating was prepared by direct growth of CNTs on C/C surface at 700oC followed by deposition of SiC using chemical vapor deposition at 1150oC for 1 hour. SiC was deposited on the CNTs as well as the interface between CNTs and C/C, making CNTs strongly rooted o...

ژورنال: :علوم و فناوری کامپوزیت 2015
حسن شریفی دانیال داودی حمید غیور

در این پژوهش اثر دما و کسر حجمی تقویت کننده بر رفتار سایشی نانو کامپوزیت al/x vol% sicp (x=0, 1, 3, 5) بررسی شده است. نتایج نشان داد افزودن ذرات تقویت کننده موجب بالا رفتن دمای انتقال به سایش شدید نمونه ها می شود، به گونه ای که برای آلومینیم تقویت نشده، دمای انتقال به سایش شدید 125 درجه سانتی گراد، برای کامپوزیتal-1%sic  150 درجه سانتی گراد و برای نمونه های al-3%sic و ,al-5%sic 175 درجه سانتی گ...

Journal: :Chest 2002
Hector G Ortega David N Weissman Deanna L Carter Daniel Banks

STUDY OBJECTIVES To document the current practice of occupational asthma (OA) diagnosis and use of specific inhalation challenge (SIC). DESIGN, SETTING, AND PARTICIPANTS A survey evaluating the current practice of SIC was mailed to 259 residency training programs in adult pulmonary diseases, allergy and immunology, and occupational medicine accredited in the United States and Canada during th...

Journal: :Journal of innate immunity 2010
Morgan A Pence Suzan H M Rooijakkers Anna L Cogen Jason N Cole Andrew Hollands Richard L Gallo Victor Nizet

Streptococcal inhibitor of complement (SIC) is a highly polymorphic extracellular protein and putative virulence factor secreted by M1 and M57 strains of group A Streptococcus (GAS). The sic gene is highly upregulated in invasive M1T1 GAS isolates following selection of mutations in the covR/S regulatory locus in vivo. Previous work has shown that SIC (allelic form 1.01) binds to and inactivate...

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In this study, the effect of two types of SiC powders consist of SiC-1 (β-SiC) and SiC-2 (β-SiC+α-SiC) and also different values of CaO additive consist of 0, 0.4 and 0.8 weight percent on sintering behavior of sintered SiC with pressureless technique in Al2O3-Y2O3-CaO additive system  was investigated. In all specimens, Al2O3:Y2O3 molar ratio was equal to 3:2 and all amounts of additive were e...

2014
Dan Zhu Mingxia Gao Hongge Pan Yi Pan Yongfeng Liu Shouquan Li Hongwei Ge Ningxiang Fang

Dense silicon carbide (SiC) matrix composites with SiC whiskers and particles as reinforcement were prepared by infiltrating molten Si at 1550 °C into porous preforms composed of pyrolysed rice husks (RHs) and extra added SiC powder in different ratios. The Vickers hardness of the composites showed an increase from 18.6 to 21.3 GPa when the amount of SiC added in the preforms was 20% (w/w), and...

2013
J H Choi L Latu-Romain E Bano Anne Henry W J Lee J. H. Choi E. Bano W. J. Lee

Different polytypes (α-SiC and β-SiC) and crystallographic orientations ((0001) and (11-20) of 6H-SiC) have been used in order to elaborate Silicon Carbide (SiC) nanopillars using inductively coupled plasma etching method. The cross section of the SiC pillars shows a rhombus, pentagon, or hexagonal morphology depending on polytypes and crystallographic orientations. The favored morphologies of ...

2011
B. P. Burton Steve Demers A. van de Walle

The cluster-expansion method was used to perform first principles phase diagram calculations for the wurtzite-structure quasibinary systems (SiC)1 X(AlN)X, (SiC)1 X (GaN)X and (SiC)1 X(InN)X; and to model variations of band gaps as functions of bulk compositions and temperature. In SiC-AlN, plane wave pseudopotential formation-energy calculations predict low-energy metastable states with format...

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