Differential capacitance versus frequency curves simulated for different equivalent circuits representing different cases of anion adsorption have been analyzed. The analysis showed that in all cases with an ideal, homogeneous electrode surface, the real value of the differential capacitance, representing the sum of the double layer and adsorption capacitances (independent of frequency) could b...

We have built a physical gate capacitance model for III-V FETs that incorporates quantum capacitance and centroid capacitance in the channel. We verified its validity with simulations (Nextnano) and experimental measurements on High Electron Mobility Transistors (HEMTs) with InAs and InGaAs channels down to 30 nm in gate length. Our model confirms that in the operational range of these devices,...

induction heating is widely used in metal industry for melting or heating thin slabs in a continuous casting plant. the wide application is based on good efficiency, high production rate and non-polluting conditions. for designing a parallel resonant induction heating system, calculating the capacitance for the resonant circuit is important, because its value affects resonance frequency, output...

Capacitance sensors are widely used to measure various physical quantities, including position, pressure, and concentration of certain chemicals [1-6]. Integrating capacitive sensors into a small wireless sensor system is challenging due to their large power consumption relative to the total system power/energy budget, which can be as low as a few nW [4]. Typical capacitance-to-digital converte...

An integrated capacitance bridge for high-resolution, wide temperature range quantum capacitance measurements Arash Hazeghi, 2 Joseph A. Sulpizio, 3 Georgi Diankov, David Goldhaber-Gordon, a) and H.S. Philip Wong These authors contributed equally to this work Department of Electrical Engineering, Stanford University Department of Physics, Stanford University Department of Chemistry, Stanford Un...

The charge/discharge phenomenon of capacitance between terminals in a power MOSFET affects on its switching behavior of the device. The input capacitance is composed of the gate-source capacitance CGS and the gate-drain capacitance CGD, which vary with gate voltage VGS. This paper characterizes the relationship between the input capacitance of a SiC MOSFET and the gate voltage with considering ...

We have built a physical gate capacitance model for III-V FETs that incorporates quantum capacitance and centroid capacitance in the channel. We verified its validity with simulations (Nextnano) and experimental measurements on High Electron Mobility Transistors (HEMTs) with InAs and InGaAs channels down to 30 nm in gate length. Our model confirms that in the operational range of these devices,...

Decoupling capacitors (decap) are often used to filter out noise in the power distribution system (PDS). Decaps acts as a local source of energy for a short period. With the scaling of CMOS technologies the power supply voltage is lowered, clock frequency has gone up, and more functionality is integrated on-chip resulting in higher simultaneous switching noise (SSN). As a result signal integrit...

Since the early 1950s, microwave circuits have evolved from discrete circuits to planar integrated circuits, then to multilayered and three-dimensional integrated circuits. With the increased circuit density, the multiconductor line in multilayered dielectric media has become the major form of the transmission line or interconnect. Multilayered routing reduces the area as well as the volume of ...

A novel method for measuring very small capacitance changes based on capacitance-to-phase angle conversion is introduced in this article. This new method is the improved or linearized version of the nonlinear capacitance-to-phase angle conversion method. The main features of this scheme are the very good linearity, extremely high stray immunity and a very high resolution. The experimental resul...