Memory based on phase change materials is currently the most promising candidate for bridging the gap in access time between memory and storage in traditional memory hierarchy. However, multilevel storage is still hindered by the so-called resistance drift commonly related to structural relaxation of the amorphous phase. Here, we present the temporal evolution of infrared spectra measured on am...

We present a simple picture to understand the bandgap variation of any chiral carbon nanotubes with tensile and torsional strains. Using this picture, we are able to predict a simple dependence of d(Bandgap)/d(strain) on the value of (Nx −Ny) mod 3, for semiconducting tubes. We also predict a novel change in sign of d(Bandgap)/d(strain) as a function of tensile strain arising from a change in t...

ZnSn1-x Gex N2 direct bandgap semiconductor alloys, with a crystal structure and electronic structure similar to InGaN, are earth-abundant alternatives for efficient, high-quality optoelectronic devices and solar-energy conversion. The bandgap is tunable almost monotonically from 2 eV (ZnSnN2 ) to 3.1 eV (ZnGeN2 ) by control of the Sn/Ge ratio.

The ability to control the size of the electronic bandgap is an integral part of solid-state technology. Atomically thin two-dimensional crystals offer a new approach for tuning the energies of the electronic states based on the unusual strength of the Coulomb interaction in these materials and its environmental sensitivity. Here, we show that by engineering the surrounding dielectric environme...

P-type doping of wide-bandgap semiconductors has long been a challenging issue for the relatively large activation energy and strong compensation of acceptor states in these materials, which hinders their applications in ultraviolet (UV) optoelectronic devices drastically. Here we show that by employing electrostatic doping method, hole-dominant region can be formed in wide bandgap semiconducto...

The field energy distributions and effective mode areas of silica-based photonic bandgap fibers with a honeycomb airhole structure in the cladding and an extra airhole defining the core are investigated. We present a generalization of the common effective area definition, suitable for the problem at hand, and compare the results for the photonic bandgap fibers with those of indexguiding microst...

Silicon, germanium, and related alloys, which provide the leading materials platform of electronics, are extremely inefficient light emitters because of the indirect nature of their fundamental energy bandgap. This basic materials property has so far hindered the development of group-IV photonic active devices, including diode lasers, thereby significantly limiting our ability to integrate elec...

A wide variety of photovoltaic cell technologies have shown dramatic performance improvements over the past decade, yet the prospect of a practical module capable of 50% efficiency remains remote. Experimentally achieved singlecell devices have achieved a record efficiency of 28.8% [1], which is close to the theoretical limit of 33.8% for such devices [2]. However, the singlecell limit is far b...

Exploiting a controllable technique for red and blue shifting of quantum well’s bandgap energy, we have fabricated LED sources accessing a wide frequency spectrum along with all-optical intensity modulator devices. . We demonstrate bandgap tuning of InGaAsP multiple quantum well structures by utilizing an impurity free vacancy diffusion technique. Substantial modification of the bandgap energy ...

Layered semiconductors based on transition-metal chalcogenides usually cross from indirect bandgap in the bulk limit over to direct bandgap in the quantum (2D) limit. Such a crossover can be achieved by peeling off a multilayer sample to a single layer. For exploration of physical behavior and device applications, it is much desired to reversibly modulate such crossover in a multilayer sample. ...