The threshold voltage instability in p-GaN gate high electron mobility transistors (HEMTs) has been brought into evidence recent years. It can lead to reliability issues switching applications, and it be followed by other degradation mechanisms. In this paper, a Vth measurement protocol established for SiC MOSFETs is applied GaN HEMTs: the triple sense protocol, which uses bias precondition tra...

Introduction: Recent developments of radiotherapy techniques, require high accuracy detectors to determine the delivered dose in a small area. Chemical vapor deposition (CVD) or naturally growth diamond detectors which are commercially available are good candidates for this purpose. In these detectors two electrodes with high different electrical potential are deposited on both...

This paper presents a method to control both the dc boost and the ac output voltage of Z-source inverter using neural network controllers. The capacitor voltage of Z-source network has been controlled linearly in order to improve the transient response of the dc boost control of the Z-source inverter. The peak value of the line to line ac output voltage is used to control and keep the ac output...