نتایج جستجو برای: annealing in vacuum
تعداد نتایج: 16993521 فیلتر نتایج به سال:
Hydrogen doped In₂O₃ thin films were prepared by room temperature sputter deposition with the addition of H₂O to the sputter gas. By subsequent vacuum annealing, the films obtain high mobility up to 90 cm²/Vs. The films were analyzed in situ by X-ray photoelectron spectroscopy (XPS) and ex situ by X-ray diffraction (XRD), optical transmission and Hall effect measurements. Furthermore, we presen...
Nanocomposite films consisting of gold inclusions in the polytetrafluoroethylene (PTFE) matrix were obtained by thermal vacuum deposition. Annealing of the obtained films with different temperatures was used to measure varying of film morphologies. The dependence of optical properties of the films on their morphology was studied. It was established that absorption and profile of the nanocomposi...
Porphyrin/Au and Au/porphyrin/Au systems were prepared by vacuum evaporation and vacuum sputtering onto glass substrate. The surface morphology of as-prepared systems and those subjected to annealing at 160°C was studied by optical microscopy, atomic force microscopy, and scanning electron microscopy techniques. Absorption and luminescence spectra of as-prepared and annealed samples were measur...
The carbon-coated TiO2(B) nanosheet composite synthesized by one-step hydrolysis of TiCl3 followed by vacuum annealing and air annealing delivers outstanding electrochemical performance as a negative electrode for Li-ion batteries, i.e. reversible capacity above 150 mA h g(-1) at 30 C (10 A g(-1)).
Si nanocrystals embedded in thermally grown SiO2 have been annealed at temperatures between 400 and 900 °C in a variety of atmospheres. Positron annihilation spectroscopy has been employed to study changes in the interface regions between nanocrystalline Si ~nc-Si! and SiO2 with the support of photoluminescence measurements. We find that nitrogen and oxygen are trapped in the voids around nc-Si...
The reduction of oxides during annealing and growth in low pressure processes is a widely known problem. We hence investigate the influence of mere annealing and of growth in vacuum systems to shed light on the reasons behind the reduction of perovskites. When comparing the existing literature regarding the reduction of the perovskite model material SrTiO3 it is conspicuous that one finds diffe...
The impact of polymer removal by forming gas and vacuum annealing on the doping, strain, and morphology of chemical vapor deposited (CVD) and mechanically exfoliated (ME) graphene is investigated using Raman spectroscopy and atomic force microscopy (AFM). The behavior of graphene exposed and unexposed to polymer is compared. It is found that the well-known doping effect after forming gas anneal...
Iron oxide thin films, with an α-Fe2O3 phase, were deposited by two techniques. The first was evaporation of iron in vacuum, followed by oxidation through annealing in air. The second was reactive evaporation of iron in an oxygen atmosphere. This was also followed by annealing in air. The structural, morphological and chemical properties of the films were investigated. All films were polycrysta...
in this research, mechanical alloying was used to produce ti-50al, ti-45al-5cr and ti-45al-5w (at%) alloys. the effect of ternary addition (cr and w) on microstructure and production efficiency of tial alloy were investigated. alloying was performed in a planetary mill and the milling time varying from 5 to 70h. the structural evaluation in these powders was done by x-ray diffraction (xrd) tech...
The In2S3 thin film is prepared using sulfurate method under a vacuum in a sealed tube of amorphous indium thin film. The later film is pre-deposited on glass with thermal evaporation. We have studied the effect of the temperature and the annealing time on the structural and morphological properties In2S3 thin films. The X-ray diffraction (XRD) shows a good crystallinity found until the anneali...
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