Field-effect transistors (GFETs) were fabricated on mechanically flexible substrates using chemical vapor deposition grown graphene. High current density (nearly 200 μA μm(-1)) with saturation, almost perfect ambipolar electron-hole behavior, high transconductance (120 μS μm(-1)) and good stability over 381 days were obtained. The average carrier mobility for holes (electrons) is 13,540 cm(2) V...

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Many effects influence toroidal flow evolution in tokamak plasmas. Momentum sources and radial transport due to collisional processes and microturbulence-induced anomalous transport are usually considered. In addition, toroidal flow can be affected by non-axisymmetric magnetic fields; resonant components cause localized electromagnetic toroidal torques near rational surfaces in flowing plasmas ...

For the application of colloidal semiconductor quantum dots in optoelectronic devices, for example, solar cells and light-emitting diodes, it is crucial to understand and control their charge transport and recombination dynamics at high carrier densities. Both can be studied in ambipolar, light-emitting field-effect transistors (LEFETs). Here, we report the first quantum dot light-emitting tran...

We demonstrate high yield fabrication of field effect transistors (FET) using chemically reduced graphene oxide (RGO) sheets. The RGO sheets suspended in water were assembled between prefabricated gold source and drain electrodes using ac dielectrophoresis. With the application of a backgate voltage, 60% of the devices showed p-type FET behavior, while the remaining 40% showed ambipolar behavio...

We present the results of a 2-D, two fluid (ions and neutrals) simulation of the ambipolar filamentation process, in which a magnetized, weakly ionized plasma is stirred by turbulence in the ambipolar frequency range. The higher turbulent velocity of the neutrals in the most ionized regions gives rise to a non-linear force driving them out of these regions, so that the initial ionization inhomo...

We describe a straightforward technique for the measurement of carrier diffusion in semiconductors. Using an optical microscope we can spatially image luminescence with a resolution of ;500 nm. We measured the ambipolar diffusion length in a Zn0.75Cd0.25Se–ZnSe single quantum well by fitting the spatially resolved luminescence profile with the solution of the two-dimensional diffusion equation....

Tokamak plasma transport equations are usually obtained by flux surface averaging the collisional Braginskii equations. However, tokamak plasmas are not in collisional regimes. Also, ad hoc terms are added for neoclassical effects on the parallel Ohm’s law, fluctuation-induced transport, heating, current-drive and flow sources and sinks, small magnetic field nonaxisymmetries, magnetic field tra...

Experiments are performed at the Enormous Toroidal Plasma Device at UCLA to study the neutral boundary layer (NBL) between a magnetized plasma and a neutral gas along the direction of a confining magnetic field. This is the first experiment to measure plasma termination within a neutral gas without the presence of a wall or obstacle. A magnetized, current-free helium plasma created by a lanthan...

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