The electrical resistivity values for a series of pure and doped (Co, Mn, Al) ZnO epitaxial films grown by pulsed laser deposition were measured with equipment designed for determining the direct current resistivity of high resistance samples. Room-temperature resistances ranging from 7 x 10(1) to 4 x 10(8) Omega/sq were measured on vacuum-reduced cobalt-doped ZnO, (Al,Co) co-doped ZnO, pure co...

γ-Al(2)O(3) is a well known catalyst support. The addition of Ce to γ-Al(2)O(3) is known to beneficially retard the phase transformation of γ-Al(2)O(3) to α-Al(2)O(3) and stabilize the γ-pore structure. In this work, Ce-doped γ-Al(2)O(3) nanowires have been prepared by a novel method employing an anodic aluminium oxide (AAO) template in a 0.01 M cerium nitrate solution, assisted by urea hydroly...

In this work we report a study on the structure, optical and electrical properties of P, Sb and Al implanted ZnO thin films that had been produced by r.f. magnetron sputtering. The influence of the different replacing atoms on the structure and properties of the films has been explored. Looking for the best annealing conditions, two different annealing temperatures (300 degrees C and 500 degree...

The aqueous-based Zn-ammine complex solutions represent one of the most promising routes to obtain the ZnO electron transport layer (ETL) at a low temperature in inverted organic solar cells (OSCs). However, to dope the ZnO film processed from the Zn-ammine complex solutions is difficult since the introduction of metal ions into the Zn-ammine complex is a nontrivial process as ammonium hydroxid...

Ti-doped nano MgAl2O4 for white emission was synthesized by combustion method. Extrinsic Schottky defects, Al vacancies and Ti4+ dopant in Al sites, which are considered to be responsible for bluish-white emission, were observed by STEM on the surface of Ti-doped nano MgAl2O4 powder. The stabilities of the Schottky defect associates, (TiAl·-VAl''')'', were demonstrated by DFT calculation. The e...

The maximum conductivity achievable in Al-doped ZnO thin films prepared by atomic layer deposition (ALD) is limited by the low doping efficiency of Al. To better understand the limiting factors for the doping efficiency, the three-dimensional distribution of Al atoms in the ZnO host material matrix has been examined on the atomic scale using a combination of high-resolution transmission electro...

A large area and broadband ultra-black absorber based on microstructured aluminum (Al) doped silicon (Si) films prepared by a low-cost but very effective approach is presented. The average absorption of the absorber is greater than 99% within the wide range from 350 nm to 2000 nm, and its size reaches to 6 inches. We investigate the fabrication mechanism of the absorber and find that the Al ato...

P-type doping in high Al-content AlGaN alloys is a main challenge for realizing AlGaN-based deep ultraviolet optoelectronics devices. According to the first-principles calculations, Mg activation energy may be reduced so that a high hole concentration can be obtained by introducing nanoscale (AlN)5/(GaN)1 superlattice (SL) in Al0.83Ga0.17N disorder alloy. In this work, experimental evidences we...

Diamond-like carbon (DLC) thin films used in this study were prepared with DC magnetron sputtering deposition. Silicon (100) wafers were used as the substrates onto which an RF bias was applied during the film deposition. For the nitrogen doped DLC films, a pure graphite target was used as the carbon source and nitrogen gas was introduced into the deposition chamber via a mass flow controller. ...

We have investigated the structures, electronic structures and magnetic properties of the triazine-based g-C3N4 (gt-C3N4) monolayer doped with B, Al, and Cu atoms based on density functional theory using ab initio calculations. The B atom prefers to be situated at the center of the triazine ring, whereas the Al and Cu atoms tend to be located above the center of the triazine ring. The doping at...