Silicon carbide is an important structural and electronic ceramic material that finds many uses in a wide variety of applications require stability at extreme conditions. In this study, we provide detailed investigation the formation energies point defects dopants bulk cubic silicon (3C-SiC) 3C-SiC grain boundaries (GBs) using first principles methods charge distribution analysis. We also deter...

Both 3C and 6H stacking faults have been observed in a low doped 4H-SiC epitaxial layer grown in a hot-wall CVD reactor on a heavily doped (off-axis) 4H-SiC substrate. They appear differently on the different parts of sample, with energetic dispersion ranging from 3.01 eV to 2.52 eV. Since they behave as natural type-II quantum wells in the 4H-SiC matrix, the thickness dependence of the exciton...

• F + center exchange mechanism has been invoked in order to explain the long range magnetic system. The Curie temperature is found be above 350 K for all doped samples obtained from modified Bloch’s T 3/2 law. dynamic nature of BMPs sizes have studied extensively using Hc vs data. spontaneous spin polarization induced system due strong hybridization between (C) 2p and (Ni) 3d orbital. decrease...

background and aims: coxsackievirus b3 (cvb3) is the most common agent known to cause viral myocarditis. the viral genome encodes a single polyprotein that is cleaved to produce several proteins by virally encoded proteases. most of this proteolytic processing is catalyzed by a cysteine protease called 3c. the 3c protease plays major role in viral replication and cellular damage. methods: to un...

Abstract: Coxsackievirus B3 (CVB3) is the most common agent known to cause viral myocarditis. The viral genome encodes a single polyprotein that is cleaved to produce several proteins by virally encoded proteases. Most of this proteolytic processing is catalyzed by a cysteine protease called 3C. The 3C protease plays major role in viral replication and cellular damage. To understand the mecha...

3C-SiC films have been grown on [100] n-doped Si substrates in a horizontal cold wall CVD reactor. Without the use of plasma enhancement, precursors silane and propane are used to deposit silicon carbide at T < 1200°C. The structure has investigated via FESEM, XRD Raman spectroscopy. It found that growth rates between 200 300 nm/h. Additionally, structural analysis give evidence polycrystall...

Epstein-Barr virus (EBV) nuclear antigen 3C (EBNA-3C) is a large transcriptional regulator essential for EBV-mediated immortalization of B lymphocytes. We previously identified interactions between EBNA-3C and two cellular transcription factors, J kappa and Spi proteins, through which EBNA-3C regulates transcription. To better understand the contribution of these interactions to EBNA-3C functio...