This paper presents two low noise amplifier (LNA) circuit topologies for ultra-wideband wireless communications in 0.13μm PHEMT GaAs technology. They are with source inductive degeneration and source grounded, respectively. The simulation results show that the LNA involving source inductor possesses good performances at 120MHz-3GHz. Its noise figure(NF) and voltage standing wave ratios(VSWRs) a...

A fully matched Ka-band wideband pseudomorphic highelectron-mobility transistor (PHEMT) 1-W monolithic millimeter-wave integrated circuit (MMIC) high-power amplifier (HPA) without any external circuit is developed. The two-stage HPAs are prepared on 2-mil GaAs substrates with a small chip size of 3.46 2.9 mm. At least 10-dB small-signal gain, 29.5 dBm P 1dB, 31-dBm Psat, and better than 12-dB o...

This paper presents the 4~6GHz 6-bit MMIC digital attenuator with low phase shift. Phase compensation techniques were used in the MMIC design to reduce the phase shift. This attenuator is fabricated with 0.25μm GaAs PHEMT process. Simulation results of the developed MMIC chips in the 4~6GHz show that the 6-bit MMIC digital attenuator has 0.5dB resolution and 31.5dB dynamic attenuation range, in...

This paper presents an IDS(VGS,VDS) model to represent PHEMT behavior in the reverse ) 0 ( < DS V , and forward zone ) 0 ( > DS V . The model predicts with high accuracy the measured data as well as higher orders derivatives of the transconductance over a large range of VDS bias. These characteristics are important for the analysis of intermodulation distortion using harmonic balance or Volterr...

This paper addresses the state-of-the-art in microwave and millimetre-wave power transistor technology. The relative performance of microwave power transistor technology from 1 GHz to 60 GHz is reviewed. The fundamental technological drivers in the design of microwave compound semiconductor power transistors are discussed as the basis for developing optimum designs. A new high yield power GaAs ...

This letter presents the design and characterization of a Doherty power amplifier for K-band applications based on GaAs 150-nm pseudomorphic HEMT (pHEMT) technology Qorvo. For output combiner, wideband approach, embedding capacitance active devices in is applied. A state-of-the-art bandwidth 4 GHz achieved: 21–25-GHz range, above 29.5 dBm, with an associated added efficiency (PAE) higher than 3...

High-reliability performance of a Q-band MMIC amplifier fabricated using TRW’s 0.1 μm production AlGaAs/GaAs HEMT process technology is reported. Operating at an accelerated life test conditions of Vds=4.2V and Ids=150mA/mm, two-stage balanced amplifiers were lifetested at threetemperatures (Ta=255 C, Ta=270 C, and Ta=285 C) in air ambient. The activation energy (Ea) is as high as 1.7 eV, achie...