The present work considers electrothermal simulation of LDMOS devices and associated nonequilibrium effects. Simulations have been performed on three kinds of LDMOS: bulk Si, partial SOI and full SOI. Differences between equilibrium and nonequilibrium modeling approaches are examined. The extent and significance of thermal nonequilibrium is determined from phonon temperature distributions obtai...

We propose a pioneering approach that integrates optimization algorithms and technology computer-aided design to automatically optimize laterally-diffused metal-oxide-semiconductors (LDMOS) with field-oxide structure. define the ratio of square breakdown voltage divided by specific on-resistance as figure-of-merit (FOM) objective function our optimization. compare performance three different al...

We have developed a simple physics-based two-dimensional analytical off-state breakdown voltage model of partial buried oxide step structure (PBOSS) silicon-on-insulator laterally diffused metal semiconductor (SOI-LDMOS) transistor. The includes the expressions surface potential and electric field distributions in drift region by solving 2D Poisson equation. at Si–SiO2 is modulated additional p...

This paper presents an innovative reliability bench specifically dedicated to high RF power device lifetime tests under pulse conditions for radar application. A base-station dedicated LDMOS transistor has been chosen for RF lifetests and a complete device electric characterization has been performed. A whole review of its critical electrical parameters after accelerated ageing tests is propose...

An LDMOS RF high power amplifier with improved intermodulation distortion performance using digital predistortion is presented. The application of digital linearization method is being tested with the help of circuit simulation software ADS.

This work addresses electro-thermal simulation of LDMOS devices and associated non-equilibrium effects. Simulations have been performed on three kinds of LDMOS i.e. bulk Si, partial SOI and SOI, with a view to compare the extent of non-equilibrium in each. Phonon temperature contours and electron energies were analyzed in each case. The results indicate that, under similar operating conditions,...

Short Abstract—A simplified inverse class F power amplifier (PA) with a voltage second harmonic peaking and third harmonic short operating at 2.14GHz for WCDMA base station applications has been developed. The load network is based on transmission line harmonic traps and provides high impedance at the second and low impedance at the third harmonic to the PA. The PA uses a packaged Silicon LDMOS...