We have successfully coated a nanofeatured material with ZrO2 and TiO2 using a polymer assisted deposition technique.

This experimental study tackles the question how oxide ceramics (ZrO2 and HfO2) respond to the simultaneous exposure to two extreme conditions, pressures up to several ten GPa and irradiation with highly energetic (MeV-GeV) heavy ion projectiles. The combination of these two extreme conditions influences the materials in ways none of those two conditions alone could. In both materials, the expo...

The reaction mechanisms for diesel soot oxidation over V4/ZrO2 or V4/TiO2 oxide catalysts were studied by the means of in-situ UV-Raman spectroscopy. The results indicate that the formation of surface oxygen complexes (SOC) is a key step and the SOC species mainly exist as carboxyl groups. The presence of NO in the reaction gas stream can promote the formation of SOC species. For soot oxidation...

2014 Absorption measurements performed by means of photoacoustic absorption (PAA)-technique in wedge-shaped TiO2’ Ta2O5, and ZrO2 single-layer films at 03BB = 488 nm, 515 nm, and 647 nm permit a separate determination of bulk and interface absorption, respectively. For TiO2 and Ta2O5 films investigated the filmsubstrate interface absorption Afs dominates over the air-film interface absorption A...

This study has investigated the effect of dopant concentration on the luminescent emission of Er in ZrO2 nanocrystals. The structure and morphology of the resulting nanocrystals were characterized by X-ray diffraction and field emission scanning electron microscope. The room-temperature optical properties of synthesized nanocrystals were studied by photoluminescence spectroscopy. The dependence...

We have studied the surfaces of zirconia (ZrO2) by first-principles calculations using density functional theory. We predict surface energies and relaxations for the principal surfaces of different bulk phases of zirconia. We find that the stoichiometric tetragonal~111! and monoclinic~1̄11! are the most stable surfaces. We find a strong linear correlation between surface energies before and afte...

GaN-based metal-oxide-semiconductor capacitors with ZrO2 as the dielectric layer have been prepared by atomic layer deposition. The accumulation and depletion regions can be clearly distinguished when the voltage was swept from -4 to 4 V. Post-annealing results suggested that the capacitance in accumulation region went up gradually as the annealing temperature increased from 300 to 500 °C. A mi...