A frequency divider based on injection-locked tunable ring oscillator is designed on 0.13-μm standard CMOS. The proposed design can achieve divide-by-4 in the frequency range of 58.75-66.3 GHz. The divider dissipates 49.5 to 54.5 mW power from a 1.5-V voltage supply. Key-Words: High-speed frequency dividers, Injection-locked tunable ring oscillator, Division range

A low-profile wideband circularly polarized aperture stacked patch (ASP) antenna without air dielectric layers is presented. The new circular ASP antenna, which is fed by two orthogonal dual-offset lines through an asymmetric crossed slot, delivers a wide bandwidth of 80% for the 10-dB return loss and similar input impedance characteristics for the two ports. Then, a novel broadband 90◦ hybrid ...

An ultra-wide locking range transformer-based injection-locked frequency divider (ILFD) is presented. By making use of a 4-order transformer-based resonator and an inductive gain peaking technique, the proposed ILFD can achieve high performance in terms of wide locking range and low power consumption. Fabricated in a standard 65nm CMOS process with a core area of 0.18mm, the ILFD measures a loc...

A compact reconfigurable four-feeding microstrip antenna with polarization diversity is presented in this paper. With four triangle-shaped elements as the radiation patch, the proposed antenna can achieve good impedance match for linear polarization (LP), left-hand circular polarization (LHCP) and right-hand circular polarization (RHCP). A four-way power divider made by three Wilkinson power di...

a power divider (pd)/ power combiner (pc) with high quality factor and enhanced output ports isolation using substrate integrated waveguide (siw) technology is proposed. an siw cavity is designed to provide a high quality factor filtering response and an smd resistor is attached between two output ports to realize the high isolation. the value of the applied resistor is calculated by using the ...

A high-speed triple-modulus frequency divider (FD) is designed and fabricated in a 90-nm CMOS process. With three pairs of nMOS switches inserted in the signal paths of the regenerative divider, the FD can offer three selectable division ratios of 1/2, 1/3, and 1/4. The corresponding behavior model of the proposed divider is utilized to explain the operation principle and analyze the locking ra...