Heteroepitaxial, single-crystal-like Cu2O films on inexpensive, flexible, metallic substrates can potentially be used as absorber layers for fabrication of low-cost, high-performance, non-toxic, earth-abundant solar cells. Here, we report epitaxial growth of Cu2O films on low cost, flexible, textured metallic substrates. Cu2O films were deposited on the metallic templates via pulsed laser depos...

An epitaxial thin film consists of layers of atoms whose lattice properties are determined by those of the underlying substrate. This paper reviews mathematical modeling, analysis and simulation of growth, structure and pattern formation for epitaxial systems, using an island dynamics/level set method for growth and a lattice statics model for strain. Epitaxial growth involves physics on both a...

This work concerns high Al-containing TixAl1-xN coatings prepared using low pressure-chemical vapour deposition (LP-CVD). The were examined electron microscopy techniques, such as scanning transmission (STEM), energy dispersive X-ray analysis (EDX) and Kikuchi diffraction (TKD). An intermediate TiN-layer with a 〈211〉 texture consisting of twinned, needle-shaped grains influences the subsequent ...

Stressed multidirectional solid-phase epitaxial growth of Si N. G. Rudawski, K. S. Jones, S. Morarka, M. E. Law, and R. G. Elliman Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611-6400, USA Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 326116200, USA Department of Electronic Materials Engineering,...

Metalorganic chemical vapor deposition (MOCVD) was used to deposit epitaxial BaTiO 3 thin films on (100) MgO substrates at 600'C. The metalorganic precursors employed in the deposition experiments were hydrated Ba(thd)2 (thd = CIIH190 2) and titanium isopropoxide. The films were analyzed by means of transmittance spectroscopy, wavelength dispersive x-ray spectrometry, secondary ion mass spectro...

Submitted for the MAR11 Meeting of The American Physical Society The layer-by-layer growth of ferromagnetic τ phase MnAl thin films by Bias Target Ion Beam1 YISHEN CUI, WENJING YIN, JIWEI LU, STUART WOLF, Univ of Virginia — It is well known that the metastable τ phase of MnAl has a L10 structure (chemical ordering along [001] directions) and is the only ferromagnetic phase of this binary interm...

An experimental investigation of the phosphorescence properties of liquid and vapour acetone is presented with the goal of introducing a novel technique for improved two-phase flow visualization. Commonly applied laser induced fluorescence (LIF) investigations of two-phase flows are challenging, in particular because of the large disparity in fluorescence intensity between the two phases and th...

A~t~ct-~en~tion-de~ndent growth phenomena have been observed for liquid-phase epitaxial In,_Fa,As and other ternary and quatemary III-V semiconductors. The data cannot be explained by existing regular solution phase equilibria models. In this study we have used the quasi-regular solution formulation to derive a model which al= considers equilibrium between the growing surface and the bulk solid...

The surface roughness of gallium arsenide ~001! films produced by metalorganic vapor-phase epitaxy has been studied as a function of temperature and growth rate by in situ scanning tunneling microscopy. Height–height correlation analysis reveals that the root-mean-height difference follows a power-law dependence on lateral separation, i.e., G(L)5kL, up to a critical distance Lc , after which it...

Epitaxial Pt(001) thin films have been grown on MgO(001) substrates using dc magnetron sputtering with an Ar/0 2 mixture at 700'C. The width (FWHM) of the rocking curve of the Pt(002) peak is between 0.160 and 0.200, which is only 0.05' wider than that of the MgO (002) peak of the cleaved substrate. The film surface roughness is about 1 nm (rms) for a 240 nm thick Pt film. No grain structure co...