Bandpass filter characteristics is numerically computed for semiconductor heterostructure based onedimensional photonic crystal at different optical wavelengths by varying the structural parameters taking GaAs/AlxGa1-xAs as a suitable composition subject to normal incidence of electromagnetic wave. Transfer matrix technique is used for numerical analysis. Results are compared with conventionall...

An analytic expression of transmittance based on the Airy wavefunctions approach has been derived for an electron through an anisotropic heterostructure with an applied voltage to the barrier of the heterostructure. The Si(110)|Si0.5Ge0.5|Si(110) heterostructure was used to examine the analytic expression. In order to evaluate the Airy wavefunctions approach, the transfer matrix method, which i...

(Received 1 August 2012; accepted 10 September 2012; published online 8 October 2012) AlN/nþ-GaN heterostructure samples with AlN barrier layer thickness between 1 nm and 4 nm have been analyzed by electrochemical capacitance-voltage measurements with a semiconductorelectrolyte contact to estimate the surface potential of this heterostructure. The combination of using a semiconductor-electrolyt...

The electron spin resonance ~ESR! of two-dimensional electrons is investigated in a gated GaAs/AlGaAs heterostructure. We found that the ESR resonance frequency can be tuned by means of a gate voltage. The front and back gates of the heterostructure produce opposite g-factor shift, suggesting that electron g factor is being electrostatically controlled by shifting the equilibrium position of th...

In this research, β-Ga 2 O 3 /NiO heterostructures were grown directly on CeO buffered Hastelloy flexible substrates. With pulsed laser deposition under high temperatures, as-grown and NiO thin films have a preferred out-of-plane orientation along the ⟨−201⟩ ➎111➉ directions. This is due to ideal epitaxial ability of buffer layer, which serves as perfect template for growth single-oriented by c...

In this work, we report on the exciton radiative lifetimes of graphitic carbon nitride monolayers in triazine-based (gC3N4-t) and heptazine-based (gC3N4-h) forms, as obtained by means ground-state plus excited-state ab initio calculations. By analyzing fine structure, highlight presence dark states show that photogenerated electron–hole (e-h) pairs gC3N4-h are remarkably long-lived, with an eff...

The rate of LO-phonon assisted interband transitions in an InAs/GaSb double quantum well heterostructure is compared with the elastic interband tunneling rate through the heterostructure ‘leaky window’. We show that the phonon-assisted process can dominate over the elastic tunneling if the initial and final electron states anticross and the anticrossing gap is smaller than the LO-phonon energy....

A GaN-based heterostructure barrier diode (HBD) similar to GaAs planar-doped barrier diodes is demonstrated. Instead of doping with impurities, the polarization-induced sheet charge at the III-nitride heterojunction behaves as an effective δ-doping. An AlGaN/GaN heterostructure is used for the demonstration. The rectifying characteristics of the polarizationinduced GaN HBDs can be tuned by cont...

This paper deals with Schottky and Heterostructure Barrier devices fabricated for planar integration in a 560 GHz Subharmonic Mixer (SHM). Taking advantage of an InP-based technology, two barrier types, metal/InGaAs and metal/InAlAs/InGaAs respectively, have been investigated. The design was carried out by means of self-consistent quantum calculations and the fabrication involved submicron Tsha...